位置：首页 > IC中文资料第3149页 > SGH5N120RUFTU
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
5A,1200VN-CHANNELPOWERMOSFET DESCRIPTION TheUTC5N120provideexcellentRDS(ON),lowgatecharge andoperationwithlowgatevoltages.Thisdeviceissuitablefor useasaloadswitchorinPWMapplications. FEATURES0 *RDS(ON)≤3.1Ω@VGS=10V,ID=2.5A *LowReverseTransferCapacitance *FastSwitchingCapabilit | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  |   | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BNDandHGTP5N120BNDareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconduc | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
21A,1200V,NPTSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiodes TheHGTG5N120BN,HGTP5N120BND,andHGT1S5N120BNDSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
SGH5N120RUFTU产品属性
- 类型
描述
- 型号
SGH5N120RUFTU
- 功能描述
IGBT 晶体管
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ABB |
N/A |
主营模块 |
190 |
原装正品,现货供应 |
|||
FAIRCHILD/仙童 |
22+ |
TO247 |
50000 |
只做原装正品,假一罚十,欢迎咨询 |
|||
FSC |
2018+ |
TO-3P |
6528 |
承若只做进口原装正品假一赔十! |
|||
FAIRCHILD/仙童 |
22+ |
TO-247 |
12800 |
本公司只做进口原装!优势低价出售! |
|||
ON |
22+ |
TO-247 |
9000 |
只做原装 假一赔十 |
|||
FAIRCHILD/仙童 |
TO247 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
||||
ON/安森美 |
21+ |
TO-247-3 |
10000 |
只做原装 假一赔万 |
|||
ON/安森美 |
24+ |
TO-247 |
880000 |
明嘉莱只做原装正品现货 |
|||
ON/安森美 |
22+ |
SMD |
8880 |
原装认准芯泽盛世！ |
|||
ON/安森美 |
21+ |
TO-247-3 |
8080 |
公司只做原装,诚信经营 |
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