位置：首页 > IC中文资料第752页 > SGH30N60RUFTU
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SGH30N60RUFTU | 封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 600V 48A 235W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 |   | |
BIDW30N60T Insulated Gate Bipolar Transistor (IGBT) General Information The Bourns® Model BIDW30N60T IGBT device combines technology from a MOS gate and a bipolar transistor for an optimum component for high voltage and high current applications. This device uses Trench-Gate Field-Stop technology providing greater control of dynamic characteris | Bourns 伯恩斯 | | ||
Low Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode 文件：1.9827 Mbytes Page：16 Pages | Infineon 英飞凌 | | ||
ACTIVE / SYNCHRONOUS RECTIFIER 文件：672.35 Kbytes Page：15 Pages | DIODES 美台半导体 | | ||
N-Channel Enhancement Mode MOSFET 文件：281.61 Kbytes Page：4 Pages | DACO | | ||
N-Channel Enhancement Mode MOSFET 文件：264.01 Kbytes Page：4 Pages | DACO | |
SGH30N60RUFTU产品属性
- 类型
描述
- 型号
SGH30N60RUFTU
- 功能描述
IGBT 晶体管 Dis Short Circuit Rated IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SEC |
24+ |
NA/ |
3346 |
原厂直销,现货供应,账期支持! |
|||
SEC |
25+ |
TO-3P |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
SEC |
24+ |
TO-3P |
990000 |
明嘉莱只做原装正品现货 |
|||
SEC/上优 |
12+ |
TO-3P |
91 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
SEC |
21+ |
TO-3P |
10000 |
原装现货假一罚十 |
|||
TI/德州仪器 |
24+ |
CAN |
12000 |
原装正品 有挂就有货 |
|||
FAIRCHILD/仙童 |
23+ |
TO |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
Fairchild/ON |
22+ |
TO3P |
9000 |
原厂渠道,现货配单 |
|||
TI/德州仪器 |
24+ |
CAN |
15000 |
全新原装现货假一赔十 |
|||
FAIRCHILD |
ROHS |
56520 |
一级代理 原装正品假一罚十价格优势长期供货 |
SGH30N60RUFTU规格书下载地址
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DdatasheetPDF页码索引
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