位置：首页 > IC中文资料第4710页 > SGD04N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SGD04N60 | Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 |   | |
SGD04N60 | Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation 文件：347.72 Kbytes Page：12 Pages | INFINEON 英飞凌 | | |
SGD04N60 | Power MOSFET 文件：1.07623 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
SGD04N60 | 分立式IGBT | INFINEON 英飞凌 | | |
封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 9.4A 50W TO252-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications | INFINEON 英飞凌 | | ||
POWER MOSFET 文件：329.86 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |
SGD04N60产品属性
- 类型
描述
- 型号
SGD04N60
- 功能描述
IGBT 晶体管 FAST IGBT NPT TECH 600V 4A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBsemi |
24+ |
TO252 |
18000 |
假一赔百原装正品价格优势实单可谈 |
|||
INFINEON |
23+ |
PG-TO252-3 |
6800 |
只做原装正品现货 |
|||
VBsemi |
21+ |
TO252 |
10010 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON |
24+ |
P-TO252-3-1 |
8866 |
||||
Infineon Technologies |
21+ |
PG-TO252-3 |
2500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
INFINEON/英飞凌 |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+ |
TO2523 |
9000 |
原厂渠道,现货配单 |
|||
VBsemi |
25+ |
TO252 |
4333 |
SGD04N60规格书下载地址
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