Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

分立式IGBT

Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. ·30% lower E off compared to previous generation\n ·Short circuit withstand time – 10μs\n ·Designed for operation above 30kHz\n ·High ruggedness, temperature stable behaviour\n ·Pb-free lead plating; RoHS compliant\n ·Qualified according to JEDEC for target applications;

Power MOSFET

文件：1.07623 Mbytes Page：9 Pages

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件：347.72 Kbytes Page：12 Pages

封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 包装：管件 描述：IGBT 600V 9.4A 50W TO252-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications

POWER MOSFET

文件：329.86 Kbytes Page：7 Pages