位置：首页 > IC中文资料第12393页 > CMT04N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
CMT04N60 | POWER MOSFET 文件：310.99 Kbytes Page：7 Pages | CHAMP 虹冠电子 |   | |
CMT04N60 | POWER MOSFET 文件：347.38 Kbytes Page：8 Pages | CHAMP 虹冠电子 | | |
CMT04N60 | POWER MOSFET 文件：329.86 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
CMT04N60 | POWER MOSFET | CHAMPION 全鹏电子 | | |
POWER MOSFET 文件：347.38 Kbytes Page：8 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：347.38 Kbytes Page：8 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：310.99 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：347.38 Kbytes Page：8 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：310.99 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：347.38 Kbytes Page：8 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：329.86 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER MOSFET 文件：329.86 Kbytes Page：7 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
POWER MOSFET 文件：347.38 Kbytes Page：8 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：310.99 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：310.99 Kbytes Page：7 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：347.38 Kbytes Page：8 Pages | CHAMP 虹冠电子 | | ||
POWER MOSFET 文件：347.38 Kbytes Page：8 Pages | CHAMP 虹冠电子 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications | INFINEON 英飞凌 | | ||
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications | INFINEON 英飞凌 | |
CMT04N60产品属性
- 类型
描述
- 型号
CMT04N60
- 功能描述
POWER MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MOSFET |
20+ |
TO220 |
67500 |
原装优势主营型号-可开原型号增税票 |
|||
CHAMPION |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
CHAMPION |
25+ |
TO-220F |
20000 |
专做原装正品,假一罚百! |
|||
CMT |
25+23+ |
TO-220F |
15008 |
绝对原装正品全新进口深圳现货 |
|||
CMT |
25+ |
TO-220 |
27500 |
原装正品,价格最低! |
|||
CMT |
24+ |
TO-220 |
868 |
||||
CM |
25+ |
TO-220F |
2800 |
原装现货!可长期供货! |
|||
CET |
25+ |
TO- |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
TOSHIBA/东芝 |
专业铁帽 |
TO220 |
350 |
原装铁帽专营,代理渠道量大可订货 |
|||
TW |
2009 |
TO-220 |
506 |
全新 发货1-2天 |
CMT04N60芯片相关品牌
CMT04N60规格书下载地址
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CMT04N60数据表相关新闻
CMS-151103-088SP
CMS-151103-088SP
2024-3-13CMS79FT738
CMS79FT738
2024-1-8CMU1010-0000-000N0U0A30H
CMU1010-0000-000N0U0A30H
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CMU1010-0000-000N0U0A40G
2021-6-24CMS69F116C
CMS69F116C，全新.当天发货或门市自取，如需了解更多产品信息联系我们.零七五五.八二七三二二九一/零七五五，八五二七四六六二 ，企鹅:一一七四零五二三五三/一八五二三 四六九零六.V:八七六八零五五八.
2021-6-9CMT-9648-85T
CMT-9648-85T CPI-3014-90T CPI-3213-90PM CPI-4233-87T CPT-1404-85T CPI-4233-92T CPI-4232-72SST CPS-4242-100T CPS-4013-110T CPI-3816-95T SCE016LD3VC1S CPI-2212-85PM CPT-4011-85PM CPI-4232-92SST CPI-3119-90PM CMI-1295IC-0385T NBL45282H-A3 HCM1206BX SCE016LD2VC1S
2021-4-27
DdatasheetPDF页码索引
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