SFT120晶体管资料
SFT120别名:SFT120三极管、SFT120晶体管、SFT120晶体三极管
SFT120生产厂家:
SFT120制作材料:Ge-PNP
SFT120性质:高频放大 (AH)
SFT120封装形式:直插封装
SFT120极限工作电压:25V
SFT120最大电流允许值:0.01A
SFT120最大工作频率:<1MHZ或未知
SFT120引脚数:3
SFT120最大耗散功率:0.12W
SFT120放大倍数:
SFT120图片代号:C-36
SFT120vtest:25
SFT120htest:999900
- SFT120atest:0.01
SFT120wtest:0.12
SFT120代换 SFT120用什么型号代替:3AG95C,
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers | SANYO 三洋 | |||
NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, mot | SANYO 三洋 | |||
Bipolar Transistor Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive | ONSEMI 安森美半导体 | |||
isc Silicon NPN Power Transistor DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) • Fast -Switching speed • High allowable power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter • | ISC 无锡固电 | |||
Bipolar Transistor, 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA SFT1202 is Bipolar Transistor, 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA for High-Voltage Switching Applications. • Adoption of FBET, MBIT process\n• Large current capacity\n• Low collector-to-emitter saturation voltage\n• High-speed switching\n• High allowable power dissipation; | ONSEMI 安森美半导体 | |||
Bipolar Transistor Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive | ONSEMI 安森美半导体 | |||
Bipolar Transistor Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive | ONSEMI 安森美半导体 | |||
封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 150V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 150V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ONSEMI 安森美半导体 | |||
ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage | MOTOROLA 摩托罗拉 | |||
ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W | NEC 瑞萨 | |||
MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly | MOTOROLA 摩托罗拉 | |||
DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12 | MOTOROLA 摩托罗拉 | |||
POWER TRANSISTORS(5.0A,60-100V,65W) ... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll | MOSPEC 统懋 |
SFT120产品属性
- 类型
描述
- Pb-free:
Pb
- Status:
Active
- Polarity:
NPN
- Type:
Low VCE(sat)
- VCE(sat) Max (V):
0.165
- IC Cont. (A):
2
- VCEO Min (V):
150
- VCBO (V):
180
- VEBO (V):
7
- VBE(sat) (V):
0.85
- hFE Min:
200
- hFE Max:
560
- PTM Max (W):
1
- Package Type:
DPAK-3/TO-252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi(安森美) |
25+ |
- |
18746 |
样件支持,可原厂排单订货! |
|||
onsemi(安森美) |
25+ |
- |
18798 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ONSEMI/安森美 |
24+ |
TO-252 |
17500 |
郑重承诺只做原装进口现货 |
|||
ON/ |
24+ |
TO252 |
5000 |
全新原装正品,现货销售 |
|||
ONSEMI/安森美 |
26+ |
NA |
43600 |
全新原装现货,假一赔十 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ON |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
ON |
2023+ |
TO252 |
8800 |
正品渠道现货 终端可提供BOM表配单。 |
|||
SNAYO |
2022+ |
SOT-252 |
12888 |
原厂代理 终端免费提供样品 |
SFT120规格书下载地址
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2019-5-6SG1503T-精密2.5伏参考...
描述 这种单片集成电路是一个完全独立的精密电压参考发生器,内部装饰为± 1%的准确度。需要较少比静态电流为2mA,这种装置可以提供10mA的过剩的总负载和线路引起的误差小于0.5%。另外本计画为电压精度,实现了内部修整温度系数的输出电压通常为10 ppm的/° C的因此,这些提法应用关键仪器和D很好的选择到一个转换器系统。该SG1503规定工作在整个军事环境温度范围-55 ° C至125 ° C,而在SG2503是专为-25 ° C至85 ° C和0℃的商业应用SG3503至70℃ 特征 ·输出电压调整到±1% ·输入电压范围
2013-3-15
DdatasheetPDF页码索引
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