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SFT120晶体管资料

  • SFT120别名:SFT120三极管、SFT120晶体管、SFT120晶体三极管

  • SFT120生产厂家

  • SFT120制作材料:Ge-PNP

  • SFT120性质:高频放大 (AH)

  • SFT120封装形式:直插封装

  • SFT120极限工作电压:25V

  • SFT120最大电流允许值:0.01A

  • SFT120最大工作频率:<1MHZ或未知

  • SFT120引脚数:3

  • SFT120最大耗散功率:0.12W

  • SFT120放大倍数

  • SFT120图片代号:C-36

  • SFT120vtest:25

  • SFT120htest:999900

  • SFT120atest:0.01

  • SFT120wtest:0.12

  • SFT120代换 SFT120用什么型号代替:3AG95C,

型号 功能描述 生产厂家 企业 LOGO 操作

NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers

SANYO

三洋

NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications

High-Voltage Switching Applications Features • Adoption of FBET, MBIT process. • High current capacitance. • Low collector-to-emitter saturation voltage. • High-speed switching. • High allowable power dissipation. Applications • DC / DC converter, relay drivers, lamp drivers, mot

SANYO

三洋

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

ONSEMI

安森美半导体

isc Silicon NPN Power Transistor

DESCRIPTION • Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.165V(Max)( IC= 1A; IB= 0.1A) • Fast -Switching speed • High allowable power dissipation • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • DC/DC converter •

ISC

无锡固电

Bipolar Transistor, 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA

SFT1202 is Bipolar Transistor, 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA for High-Voltage Switching Applications. • Adoption of FBET, MBIT process\n• Large current capacity\n• Low collector-to-emitter saturation voltage\n• High-speed switching\n• High allowable power dissipation;

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

ONSEMI

安森美半导体

Bipolar Transistor

Bipolar Transistor 150V, 2A, Low VCE(sat), NPN Single TP/TP-FA Features • Adoption of FBET, MBIT process • Large current capacity • Low collector-to-emitter saturation voltage • High-speed switching • High allowable power dissipation Applications • DC / DC converter, relay drive

ONSEMI

安森美半导体

封装/外壳:TO-251-3 短引线,IPak,TO-251AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 150V 2A TP 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

封装/外壳:TO-252-3,DPak(2 引线 + 接片),SC-63 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS NPN 150V 2A TPFA 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

ONSEMI

安森美半导体

ULTRAFAST RECTIFIERS 1.0 AMPERE 200-400-600 VOLTS

SWITCHMODE™ Power Rectifiers . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • Ultrafast 25, 50 and 75 Nanosecond Recovery Times • 175°C Operating Junction Temperature • Low Forward Voltage

MOTOROLA

摩托罗拉

ZENER DIODES 200 mW 2 PINS SUPER MINI MOLD

DESCRIPTION Type RD2.0S to RD120S Series are 2 PIN Super Mini Mold Package zener diodes possessing an allowable power dissipation of 200 mW. FEATURES • Sharp Breakdown characteristic. • Vz: Applied E24 standard. APPLICATIONS Circuit for Constant Voltage, Constant Current, W

NEC

瑞萨

MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

The SA5.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA5.0A series is supplied in Motorola’s exclusive, cost-effective, highly

MOTOROLA

摩托罗拉

DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

Plastic Medium-Power Complementary Silicon Transistors . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 100 mAdc VCEO(sus) = 60 Vdc (Min) — TIP12

MOTOROLA

摩托罗拉

POWER TRANSISTORS(5.0A,60-100V,65W)

... designed for general−purpose amplifier and low−speed switching applications. FEATURES: • Collector−Emitter Sustaining Voltage − VCEO(sus) = 60 V (Min) − TIP120, TIP125 = 80 V (Min) − TIP121, TIP126 = 100 V (Min) − TIP122, TIP127 • Low Coll

MOSPEC

统懋

SFT120产品属性

  • 类型

    描述

  • Pb-free:

    Pb

  • Status:

    Active

  • Polarity:

    NPN

  • Type:

    Low VCE(sat)

  • VCE(sat) Max (V):

    0.165

  • IC Cont. (A):

    2

  • VCEO Min (V):

    150

  • VCBO (V):

    180

  • VEBO (V):

    7

  • VBE(sat) (V):

    0.85

  • hFE Min:

    200

  • hFE Max:

    560

  • PTM Max (W):

    1

  • Package Type:

    DPAK-3/TO-252-3

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
onsemi(安森美)
25+
-
18746
样件支持,可原厂排单订货!
onsemi(安森美)
25+
-
18798
正规渠道,免费送样。支持账期,BOM一站式配齐
ONSEMI/安森美
2511
TO-252
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
ONSEMI/安森美
24+
TO-252
17500
郑重承诺只做原装进口现货
ON/
24+
TO252
5000
全新原装正品,现货销售
ONSEMI/安森美
26+
NA
43600
全新原装现货,假一赔十
三年内
1983
只做原装正品
ON
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
ON
2023+
TO252
8800
正品渠道现货 终端可提供BOM表配单。
SNAYO
2022+
SOT-252
12888
原厂代理 终端免费提供样品

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