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SFH4350价格
参考价格：￥2.3764
型号：SFH4350 品牌：OSR 备注：这里有SFH4350多少钱，2026年最近7天走势，今日出价，今日竞价，SFH4350批发/采购报价，SFH4350行情走势销售排行榜，SFH4350报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SFH4350 | High Power Infrared Emitter (850 nm) Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - Emission angle ± 13° - Very high radiant intensity - Short switching times - UL version available (ordering code & test conditions on request) | AMSCO 艾迈斯欧司朗 |   | |
SFH4350 | OSRAM Radial T1, SFH 4350 | AMSOSRAM | | |
SFH4350 | High Power Infrared Emitter (850 nm) 文件：257.3 Kbytes Page：7 Pages | OSRAM 艾迈斯欧司朗 | | |
SFH4350 | High Power Infrared Emitter 文件：390.89 Kbytes Page：9 Pages | OSRAM 艾迈斯欧司朗 | | |
SFH4350 | IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung 文件：144.15 Kbytes Page：8 Pages | OSRAM 艾迈斯欧司朗 | | |
High Power Infrared Emitter (850 nm) Features - Package: clear epoxy - ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) - High Power Infrared LED - Emission angle ± 13° - Very high radiant intensity - Short switching times - UL version available (ordering code & test conditions on request) | AMSCO 艾迈斯欧司朗 | | ||
IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung 文件：144.15 Kbytes Page：8 Pages | OSRAM 艾迈斯欧司朗 | | ||
High Power Infrared Emitter 文件：390.89 Kbytes Page：9 Pages | OSRAM 艾迈斯欧司朗 | | ||
High Power Infrared Emitter 文件：390.89 Kbytes Page：9 Pages | OSRAM 艾迈斯欧司朗 | | ||
POWER TRANSISTORS(16A,100-160V,125W) 16A COMPLEMENTARY SILICON POWER TRANSiSTORS 100 - 160 VOLTS 125 WATTS MJE4340 MJE4341 MJE4342 --> NPN MJE4343 MJE4350 MJE4351 MJE4352 --> PNP MJE4353 | MOSPEC 统懋 | | ||
50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat | PHILIPS 飞利浦 | | ||
NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT457 (SC-74) plastic package. PNP complement: PBSS5350D. FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Replacement for SOT89/SOT223 standar | PHILIPS 飞利浦 | | ||
50 V low VCEsat NPN transistor DESCRIPTION NPN low VCEsattransistor in a SOT54 plastic package. PNP complement: PBSS5350S. FEATURES • High power dissipation (830 mW) • Ultra low collector-emitter saturation voltage • 3 A continuous current • High current switching • Improved device reliability due to reduced heat generat | PHILIPS 飞利浦 | | ||
POW-R-BLOK Single SCR Isolated Module (500 Amperes / Up to 1600 Volts) 文件：98.45 Kbytes Page：4 Pages | POWEREX | |
SFH4350产品属性
- 类型
描述
- 型号
SFH4350
- 制造商
OSRAM
- 功能描述
LED 3MM IR 850NM
- 制造商
OSRAM
- 功能描述
LED, 3MM IR 850NM
- 制造商
OSRAM
- 功能描述
IR EMITTER, 850NM, 3.1MM, RADIAL, THD; Peak
- Wavelength
860nm; Forward Current
- If(AV)
100mA; Rise
- Time
12ns; Fall Time
- tf
12ns; Radiant
- Intensity
110mW/Sr; Viewing
- Angle
13; Forward Voltage VF
- Max
1.5V; Diode Case
- Style
T-1 ;RoHS
- Compliant
Yes
- 制造商
OSRAM
- 功能描述
Infrared T-1 LED 850nm 26?? SFH4350
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
OSRAM/欧司朗 |
25+ |
DIP-2 |
32000 |
OSRAM/欧司朗全新特价SFH4350即刻询购立享优惠#长期有货 |
|||
OSRAM/欧司朗 |
2026+ |
DIP-2 |
64581 |
百分百原装现货 实单必成 欢迎询价 |
|||
OSRAM/欧司朗 |
24+ |
DIP-2 |
880000 |
明嘉莱只做原装正品现货 |
|||
OSRAM |
20+ |
DIP2 |
18000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
OSRAM原装 |
25+23+ |
DIP-3 |
25856 |
绝对原装正品全新进口深圳现货 |
|||
OSRAM/欧司朗 |
25+ |
NA |
81000 |
原厂/代理渠道 价格优势 |
|||
OSRAM |
16+ |
TO-92 |
15 |
全新 发货1-2天 |
|||
OSRAM/欧司朗 |
23+ |
DIP-2 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
OOS |
24+ |
3000 |
|||||
TI |
25+ |
HTSSOP28 |
9183 |
SFH4350规格书下载地址
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DdatasheetPDF页码索引
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