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型号 功能描述 生产厂家 企业 LOGO 操作
SDR807

100 AMP 50 - 1200 VOLTS 60 nsec ULTRA FAST RECTIFIER

文件:39.89 Kbytes Page:2 Pages

SSDI

SDR807

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件:103.62 Kbytes Page:2 Pages

SSDI

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件:103.62 Kbytes Page:2 Pages

SSDI

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件:103.62 Kbytes Page:2 Pages

SSDI

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件:103.62 Kbytes Page:2 Pages

SSDI

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件:103.62 Kbytes Page:2 Pages

SSDI

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件:103.62 Kbytes Page:2 Pages

SSDI

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件:103.62 Kbytes Page:2 Pages

SSDI

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件:103.62 Kbytes Page:2 Pages

SSDI

POWER TRANSISTORS(8.0A,150-200V,60W)

MOSPEC

统懋

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

PERKINELMER

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

NTE

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

NEC

瑞萨

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

NEC

瑞萨

SDR807产品属性

  • 类型

    描述

  • 型号

    SDR807

  • 制造商

    SSDI

  • 制造商全称

    Solid States Devices, Inc

  • 功能描述

    100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

更新时间:2026-8-2 19:26:00
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