DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Common Anode Configuration • Lead Free By Design/RoHS Compliant (Note 3) • Green Device (Note 4)

DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

文件：80.14 Kbytes Page：3 Pages

Schottky

DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Common Anode Configuration • Lead Free By Design/RoHS Compliant (Note 3) • Green Device (Note 4)

DUAL SURFACE MOUNT SCHOTTKY BARRIER DIODE

文件：80.14 Kbytes Page：3 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 40V SOT23-3 分立半导体产品 二极管 - 整流器 - 阵列

20A, 400V, 0.216 Ohm, N-Channel SMPS Power MOSFET

Features • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness • Reduced r DS(ON) • Reduced Miller Capacitance and Low Input Capacitance • Improved Switching Speed with Low EMI • 175°C Rated Junction Temperature pp Switch Mo

400V N-Channel MOSFET

Features • 19.5A, 400V, RDS(on) = 0.22 Ω @ VGS = 10 V • Low gate charge ( typical 60 nC) • Low Crss ( typical 45 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

General Description

General Description Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applica