400V N-Channel MOSFET

Features • 19.5A, 400V, RDS(on) = 0.22 Ω @ VGS = 10 V • Low gate charge ( typical 60 nC) • Low Crss ( typical 45 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=19.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.22Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

400V N-Channel MOSFET

SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver. • Temperature Compensated Gate–C

400V, 23A N-CHANNEL POWER MOSFET

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20A竊?00V N-CHANNEL MOSFET

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400V,20A N-Channel MOSFET

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