General Description

Insulated Gate Bipolar Transistors (IGBTs) with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These devices are very suitable for strobe applications

Features

• High input impedance

• High peak current capability (150A)

• Easy gate drive

• Surface Mount : SGR20N40L

• Straight Lead : SGU20N40L

Application

Strobe flash.