| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=120mΩ@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=120mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,15.2A,RDS(ON)=115mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=125mW@VGS=5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■100V,15.2A,RDS(ON)=115mΩ@VGS=10V. RDS(ON)=125mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-220&TO-263package. | CETCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 100V,11A,RDS(ON)=120mW@VGS=10V. RDS(ON)=135mW@VGS=5V. SuperHighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SR |
2023+ |
TO251 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
VBSEMI |
19+ |
T0-263 |
29600 |
绝对原装现货,价格优势! |
|||
C |
23+ |
T0-263 |
6000 |
原装正品，支持实单 |
|||
CET |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
VB |
20+ |
T0-263 |
33902 |
绝对原装正品假一罚十! |
|||
CET |
23+ |
TO-263 |
12300 |
全新原装真实库存含13点增值税票! |
|||
CET/華瑞 |
20+ |
TO-263 |
17 |
现货很近!原厂很远!只做原装 |
|||
CET/華瑞 |
2022+ |
TO-263 |
79999 |
||||
JINGDAO/晶导微 |
23+ |
SOD-123 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
CET |
08PB |
50000 |
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