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SDD313E晶体管资料

  • SDD313E别名:SDD313E三极管、SDD313E晶体管、SDD313E晶体三极管

  • SDD313E生产厂家:中国大陆半导体企业

  • SDD313E制作材料

  • SDD313E性质:低频或音频放大 (LF)_功率放大 (PA)

  • SDD313E封装形式:直插封装

  • SDD313E极限工作电压:60V

  • SDD313E最大电流允许值:3A

  • SDD313E最大工作频率:<1MHZ或未知

  • SDD313E引脚数:3

  • SDD313E最大耗散功率:30W

  • SDD313E放大倍数

  • SDD313E图片代号:B-91

  • SDD313Evtest:60

  • SDD313Ehtest:999900

  • SDD313Eatest:3

  • SDD313Ewtest:30

  • SDD313E代换 SDD313E用什么型号代替

型号 功能描述 生产厂家 企业 LOGO 操作

HIGH-FREQUENCY TRANSISTOR NPN SILICON

The RF Line NPN Silicon High-Frequency Transistor . . . designed for wideband amplifier, driver or oscillator applications in military, mobile, and aircraft radio. • Specified 28 Volt, 400 MHz Characteristics — Output Power = 1.0 Watt Power Gain = 15 dB Min Efficienc

MOTOROLA

摩托罗拉

Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp

Description: The NTE 313 is a silicon NPN transistor specifically designed for VHF mixer and VHF/RF amplifier applications. This device features high power gain, low noise, and excellent forward AGC characteristics.

NTE

PIN Photodiode

PIN Photodiode For optical control systems Features • Fast response which is well suited to high speed modulated light detection : tr, tf = 50 ns (typ.) • High sensitivity, high reliability • Peak sensitivity wavelength matched with infrared light emitting diodes : λP = 960 nm (typ.) • Wide

PANASONIC

松下

Reference Diode

文件:126.55 Kbytes Page:4 Pages

NSC

国半

Reference Diode

文件:126.55 Kbytes Page:4 Pages

NSC

国半

更新时间:2026-5-15 18:39:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROL
20+
高频管
29516
高频管全新原装主营-可开原型号增税票
M/A-COM
NA
5500
一级代理 原装正品假一罚十价格优势长期供货
M
24+
200
进口原装正品优势供应
MACOM
24+
VQFN
7850
只做原装正品现货或订货假一赔十!
MOTOROLA
25+
14
公司优势库存 热卖中!
M/A-COM
14+
SMD
5
一级代理,专注军工、汽车、医疗、工业、新能源、电力
MINI
24+
SMD
3600
MINI专营品牌全新原装正品假一赔十
MOTOROLA/摩托罗拉
25+
TO-55r
1200
全新原装现货,价格优势
MOTOROLA
23+
TO-51r
600
专营高频管模块,全新原装!
MOT
22+
高频管
350
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

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