6 A, 400 V Standard Recovery Three Phase Bridge Rectifier Assembly

• 400 V Blocking Voltage\n • Average Output Current 6 Amps\n• Low Reverse Leakage Current\n• Constructed with Void-Free, Hermetically Sealed Discretes\n• Aluminum Case for Maximum Thermal Conductivity\n• Electrically Insulated Aluminum Case\n• Fast and Ultra Fast Versions Available\n• TX, TXV, and S;

6 AMPS STANDARD RECOVERY THREE PHASE BRIDGE RECTIFIER ASSEMBLY

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5 A, 400 V Fast Recovery Three Phase Bridge Rectifier

• Fast Reverse Recovery Time 150 ns Max\n• Average Output Current 5 Amps @ 50°C\n• PIV 400 Volts Per Leg\n• Efficient Thermal Design\n• Double Plug, Void Free, Hermetically Sealed, Glass Passivated Diode Cells\n• Case Electrically Insulated\n• Machined Aluminum Case\n• Available in Ultrafast and Hyp;

FAST RECOVERY THREE PHASE BRIDGE RECTIFIER

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PHASE CONTROL THYRISTOR

• Repetitive voltage up to 1200 V • Mean on-state current 400 A • Surge current 5 kA

丝印代码：P3；NPN 17 GHz wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. FEATURES • Low current • Very high power gain • Low noise figure • High transition frequency • Very low feedback capacitance. APPLICATIONS

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER (VOLTAGE RANGE 50 to 1000 Volts CURRENT 4.0 Ampere)

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