HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

单键触摸开关IC

SD8233LE是一款单按键触摸及接近感应开关，其用途是替代传统的机械型开关。该 IC 采用CMOS工艺制造，结构简单，性能稳定。该 IC 通过引脚可配置成多种模式，可广泛应用于灯光控制、玩具、家用电器等产品。\n 特点 \n *工作电压：2.0V~5.5V \n *低功耗模式仅 1.5uA(在 3V 且无负载) \n *电源稳定后，0.5S 内完成上电初始化 \n *外部配置引脚设置为多种模式 \n *内置稳压电路 \n *灵敏度自动校准功能，工作环境发生变化可以快速自动适应 \n *最长输出约 8S \n *高可靠性，芯片内置去抖动电路，可有效防止外部噪声干扰而导致的误动作

单按键触摸开关IC

SD8233LF是一款用于单按键触摸及接近感应开关，其用途是替代传统的机械型开关。 芯片采用CMOS 工艺制造，结构简单， 内置 LDO 性能稳定、 通过引脚可配置成多种模式，广泛应用于灯光控制、玩具、家用电器等产品。产品 * 工作电压： 2.4V~5.5V\n* 低功耗模式仅 1.5uA(在 3.0V 且无负载)，快速模式电流 4uA\n* 最大响应时间为低功耗模式下 160ms(VDD 为 3V)\n* 内置 LDO 稳压电路在电源稳定后， 0.5s 内完成上电初始化\n* 灵敏度自动校准功能，工作环境发生变化可以快速校正更新\n* 外部配置引脚设置为多种模式\n* 触摸长按输出时间 16s\n* 高可靠性，芯片内置去抖动电路，可有效防止外部噪声干扰而导致的误动作\n* 可用于玻璃、陶瓷、塑料等介质表面;

单按键触摸及接近感应开关

特点\n 工作电压：2.4V~5.5V\n 低功耗模式仅 1.5uA(在 3V 且无负载)\n 电源稳定后，0.5S 内完成上电初始化\n 外部配置引脚设置为多种模式\n 内置稳压电路\n 灵敏度自动校准功能，工作环境发生变化可以快速自动适应\n 最长输出时间：无穷大\n 高可靠性，芯片内置去抖动电路，可有效防止外部噪声干扰而导致的误动作\n 可用于玻璃、陶瓷、塑料等介质表面\n SOT23-6L 封装

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

FEATURES • High power FAST recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Hockey PUK vers

Single button touch switch chip

文件：1.3914 Mbytes Page：6 Pages

FAST RECOVERY DIODES Hockey Puk Version

文件：618.18 Kbytes Page：10 Pages

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

文件：410.16 Kbytes Page：12 Pages

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

文件：410.16 Kbytes Page：12 Pages

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

文件：410.16 Kbytes Page：12 Pages

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

文件：410.16 Kbytes Page：12 Pages

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

文件：410.16 Kbytes Page：12 Pages

Fast Recovery Diodes (Hockey PUK Version), 810/910 A

文件：410.16 Kbytes Page：12 Pages

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

Integrated Circuit Low Voltage Audio Amplifier

Description: The NTE823 is an audio power amplifier in an 8–Lead DIP type package designed for use in low volt age consumer applications.