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型号 功能描述 生产厂家 企业 LOGO 操作
IRF823

N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

MOTOROLA

摩托罗拉

IRF823

N-CHANNEL POWER MOSFETS

FEATURES ● Lower RDS(ON) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Lower input capacitance ● Extended safe operating area ● Improved high temperature reliability

SAMSUNG

三星

IRF823

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

FAIRCHILD

仙童半导体

IRF823

isc N-Channel MOSFET Transistor

文件:68.51 Kbytes Page:3 Pages

ISC

无锡固电

IRF823

N-Channel Power MOSFETs

文件:381.94 Kbytes Page:5 Pages

ARTSCHIP

IRF823

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF823

Trans MOSFET N-CH 450V 2A 3-Pin(3+Tab) TO-220AB

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

NSC

国半

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

NSC

国半

8-Bit CMOS ROM Based Microcontrollers with 1k or 2k Memory, Comparator and Brown Out Detector

General Description The COP820CJ/840CJ Family ROM based microcontrollers are integrated COP8™Base core devices with 1k or 2k memory, an Analog comparator and Brownout detection. These single-chip CMOS devices are suited for lower functionality applications where power and voltage fluctuations a

NSC

国半

Integrated Circuit Low Voltage Audio Amplifier

Description: The NTE823 is an audio power amplifier in an 8–Lead DIP type package designed for use in low volt age consumer applications.

NTE

IRF823产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55°C

  • Maximum Power Dissipation:

    75000mW

  • Maximum Operating Temperature:

    150°C

  • Maximum Gate Source Voltage:

    ±20V

  • Maximum Drain Source Voltage:

    450V

  • Maximum Continuous Drain Current:

    2A

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-5-14 22:59:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TI
25+
TO-220AB
12369
样件支持,可原厂排单订货!
TI
25+
TO-220AB
12421
正规渠道,免费送样。支持账期,BOM一站式配齐
IR
DIP
1200
正品原装--自家现货-实单可谈
IR
24+
DIP
30617
一级代理全新原装热卖
IR
22+
SOP-8
8000
原装正品支持实单
IR
25+
SOP8
30000
代理全新原装现货,价格优势
HAR
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
HARRIS
23+
65480
IR
DIP
5350
一级代理 原装正品假一罚十价格优势长期供货
HARRIS
23+
DIP
5000
专注配单,只做原装进口现货

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