N-CHANNEL Enhancement-Mode Silicon Gate TMOS

Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS TMOS POWER FETs 2 and 2.5 AMPERES rDS(on) = 3 OHM 450 and 500 VOLTS rDS(on) = 4 OHM 450 VOLTS

N-CHANNEL POWER MOSFETS

FEATURES ● Lower RDS(ON) ● Improved inductive ruggedness ● Fast switching times ● Rugged polysilicon gate cell structure ● Lower input capacitance ● Extended safe operating area ● Improved high temperature reliability

N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

isc N-Channel MOSFET Transistor

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N-Channel Power MOSFETs

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Trans MOSFET N-CH 450V 2A 3-Pin(3+Tab) TO-220AB

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Features ● lat Handling Surface for Accurate Placement ● tandard Zener Breakdown Voltage Range -3.3V to 68V ● ow Profile Package

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