High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The SD5000 is a NPN Silicon Transistor designed for high gain linear performance at 1000 MHz. This part uses gold metallized die and polysilicon site ballasting to achieve high reliability and ruggedness. The SD5000 can be used for applications such as Telecommunications, Radar, ECM

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description\nThe SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide  low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk.\nBuilt on Sil • Quad SPST Switch with Zener Input Protection\n• Low Interelectrode Capacitance and Leakage\n• Ultra-High Speed Switching—tON: 1 ns\n• Ultra-Low Reverse Capacitance: 0.2 pF\n• Low Guaranteed rDS@5 V\n• Low Turn-On Threshold Voltage Benefits\n • High-Speed System Performance\n • Low Insertion Loss a;

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION\nThe SD5000 Series are monolithic arrays of four bidirectional, high performance  analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal app • Low PropagatiomTime . . . . . . . . . . . . . . . . . . . . 600 psec\n• Low On Resistance\n• Low Insertion Loss\n• Low Capacitance:\n  – Analog Input . . . . . . . . . . . . . . . . . . . . . . . . . .  3.5pF typ.\n  – Input (Gate) . . . . . . . . . . . . . . . . . . . . . . . . . . .  2.4pF typ.\;

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High-Speed DMOS Quad FET Analog Switch Arrays

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STANDARD RECOVERY DIODES Hockey Puk Version

Features ■ Wide current range ■ High voltage ratings up to 3000V ■ High surge current capabilities ■ Diffused junction ■ Hockey Puk version ■ Case style B-44 (R-PUK) Typical Applications ■ Converters ■ Power supplies ■ High power drives ■ Auxiliary system supplies for traction applicati

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

Description The SD210DE/214DE are enhancement-mode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD214DE is normally used for
±10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ult

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

High-Speed DMOS Quad FET Analog Switch Arrays

DESCRIPTION The SD5000 Series are monolithic arrays of four bidirectional, high performance analog switches manufactured with implanted high-speed, high-voltage and low resistance double-difused MOS (DMOS) process. The maximum threshold of 2V permits simple TTL and CMOS driving in small signal a

QUAD N-CHANNEL LATERAL DMOS SWITCH ZENER PROTECTED

Description The SD5000/5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Features •

Quad N-Channel Enhancement Mode DMOS Lateral Switches

Description: The SD5000 / SD5400 series of monolithic switches features four individual double-diffused enhancement-mode MOSFETs built on a common substrate. These bidirectional devices provide low on-resistance and low interelectrode capacitances to minimize insertion loss and crosstalk. Built

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

QUAD N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

封装/外壳：16-DIP（0.300"，7.62mm） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：QUAD HIGH SPEED N-CHANNEL LATERA 分立半导体产品 晶体管 - JFET

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

High-Speed DMOS Quad FET Analog Switch Arrays

文件：45.66 Kbytes Page：3 Pages

High Speed DMOS N-Channel Switch

文件：45.66 Kbytes Page：3 Pages

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere FEATURES • Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • These bridges are on the U/L Recognized Products List for currents of 50 amperes.

HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE 50 to 1000 Volts CURRENT - 50 Ampere)

FEATURES • Electrically lsolated Metal Case for Maximum Heat Dissipation. • Surge Overload Ratings to 400 Amperes. • The plastic package has Underwriters Laboratory Flammability Classification 94V-O

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

Zener Diode, 1/2 Watt 짹5 Tolerance

Features: ● Zener Voltage 2.4 to 200V ● DO35 Package

High Voltage Switch Mode Regulator

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