SD453晶体管资料

  • SD453别名:SD453三极管、SD453晶体管、SD453晶体三极管

  • SD453生产厂家

  • SD453制作材料:Si-N+Darl

  • SD453性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • SD453封装形式:直插封装

  • SD453极限工作电压:60V

  • SD453最大电流允许值:10A

  • SD453最大工作频率:<1MHZ或未知

  • SD453引脚数:3

  • SD453最大耗散功率:90W

  • SD453放大倍数:β>1000

  • SD453图片代号:B-10

  • SD453vtest:60

  • SD453htest:999900

  • SD453atest:10

  • SD453wtest:90

  • SD453代换 SD453用什么型号代替:BDT63,BDT65,BDW93A,BDX33A,

型号 功能描述 生产厂家 企业 LOGO 操作

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世威世科技公司

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2500V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2500V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2500V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

SD453产品属性

  • 类型

    描述

  • 型号

    SD453

  • 制造商

    SIPAT

  • 制造商全称

    SIPAT

  • 功能描述

    CDMA 450 SAW Duplexer

更新时间:2025-12-25 17:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
IR
23+
SCR
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
IR
24+
MODULE
2100
公司大量全新现货 随时可以发货
IR
23+
8000
只做原装现货
IR
22+
6000
终端可免费供样,支持BOM配单
Vishay General Semiconductor -
25+
B-8
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
VISHAY
25+
B-8
26
就找我吧!--邀您体验愉快问购元件!

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