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SD45晶体管资料
SD451别名:SD451三极管、SD451晶体管、SD451晶体三极管
SD451生产厂家:
SD451制作材料:Si-N+Darl
SD451性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L
SD451封装形式:直插封装
SD451极限工作电压:45V
SD451最大电流允许值:10A
SD451最大工作频率:<1MHZ或未知
SD451引脚数:3
SD451最大耗散功率:90W
SD451放大倍数:β>1000
SD451图片代号:B-10
SD451vtest:45
SD451htest:999900
- SD451atest:10
SD451wtest:90
SD451代换 SD451用什么型号代替:BDT63,BDT65,BDW93,BDX33,
型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
SD45 | Discrete Diodes 文件:109.53 Kbytes Page:2 Pages | SIRECTIFIER 矽莱克电子 | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
Fast Recovery Diodes (Stud Version), 400/450 A FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Fast Recovery Diodes (Stud Version), 400/450 A FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Fast Recovery Diodes (Stud Version), 400/450 A FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v | VishayVishay Siliconix 威世科技威世科技半导体 | |||
Fast Recovery Diodes (Stud Version), 400/450 A FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v | VishayVishay Siliconix 威世科技威世科技半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,2500V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |||
400A,2500V Stud Type Silicon Fast Reovery Diode for Exciter Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br | THINKISEMI 思祁半导体 | |||
FAST RECOVERY DIODES Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF |
SD45产品属性
- 类型
描述
- 型号
SD45
- 功能描述
Analog IC
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3369 |
原厂直销,现货供应,账期支持! |
|||
SILAN/士兰微 |
25+ |
SOP |
880000 |
明嘉莱只做原装正品现货 |
|||
SILAN/士兰微 |
22+ |
SOP-8 |
100000 |
代理渠道/只做原装/可含税 |
|||
士兰 |
23+ |
SOP-8 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
SILAN/士兰微 |
25+ |
SOP8 |
32360 |
SILAN/士兰微全新特价SD45230RSATR即刻询购立享优惠#长期有货 |
|||
SILAN(士兰微) |
24+ |
SOP-8 |
5000 |
诚信服务,绝对原装原盘。 |
|||
24+ |
2789 |
全新原装自家现货!价格优势! |
|||||
SILAN/士兰微 |
23+ |
SOP-8 |
22000 |
原厂原装假一赔十 |
|||
SILAN |
21+ |
SOP-8 |
19500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
士兰微 |
22+ |
SOP-8-225-1.27 |
45000 |
士兰微全系列渠道在售 |
SD45规格书下载地址
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2019-4-9
DdatasheetPDF页码索引
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