SD45晶体管资料

  • SD451别名:SD451三极管、SD451晶体管、SD451晶体三极管

  • SD451生产厂家

  • SD451制作材料:Si-N+Darl

  • SD451性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • SD451封装形式:直插封装

  • SD451极限工作电压:45V

  • SD451最大电流允许值:10A

  • SD451最大工作频率:<1MHZ或未知

  • SD451引脚数:3

  • SD451最大耗散功率:90W

  • SD451放大倍数:β>1000

  • SD451图片代号:B-10

  • SD451vtest:45

  • SD451htest:999900

  • SD451atest:10

  • SD451wtest:90

  • SD451代换 SD451用什么型号代替:BDT63,BDT65,BDW93,BDX33,

型号 功能描述 生产厂家&企业 LOGO 操作
SD45

Discrete Diodes

文件:109.53 Kbytes Page:2 Pages

SIRECTIFIER

矽莱克电子

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世科技威世科技半导体

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世科技威世科技半导体

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世科技威世科技半导体

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES • High power fast recovery diode series • 2.0 to 3.0 µs recovery time • High voltage ratings up to 2500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Compression bonded encapsulation • Stud v

VishayVishay Siliconix

威世科技威世科技半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1200V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,1600V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2000V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2500V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

400A,2500V Stud Type Silicon Fast Reovery Diode for Exciter

Features ※ ThinkiSemi matured process fast recovery diodes(2~3us) ※ Low forward voltage drop ※ High current capability/High reverse voltage ※ Low reverse leakage current ※ High surge current capability Application ※ Converters/Power supplies/Machine tool controls ※ Turbo Generators with Br

THINKISEMI

思祁半导体

FAST RECOVERY DIODES

Features ■ High power FAST recovery diode series ■ 2.0 to 3.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

SD45产品属性

  • 类型

    描述

  • 型号

    SD45

  • 功能描述

    Analog IC

更新时间:2025-8-9 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法
24+
NA/
3369
原厂直销,现货供应,账期支持!
SILAN/士兰微
25+
SOP
880000
明嘉莱只做原装正品现货
SILAN/士兰微
22+
SOP-8
100000
代理渠道/只做原装/可含税
士兰
23+
SOP-8
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
SILAN/士兰微
25+
SOP8
32360
SILAN/士兰微全新特价SD45230RSATR即刻询购立享优惠#长期有货
SILAN(士兰微)
24+
SOP-8
5000
诚信服务,绝对原装原盘。
24+
2789
全新原装自家现货!价格优势!
SILAN/士兰微
23+
SOP-8
22000
原厂原装假一赔十
SILAN
21+
SOP-8
19500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
士兰微
22+
SOP-8-225-1.27
45000
士兰微全系列渠道在售

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