SD45晶体管资料

  • SD451别名:SD451三极管、SD451晶体管、SD451晶体三极管

  • SD451生产厂家

  • SD451制作材料:Si-N+Darl

  • SD451性质:低频或音频放大 (LF)_开关管 (S)_功率放大 (L

  • SD451封装形式:直插封装

  • SD451极限工作电压:45V

  • SD451最大电流允许值:10A

  • SD451最大工作频率:<1MHZ或未知

  • SD451引脚数:3

  • SD451最大耗散功率:90W

  • SD451放大倍数:β>1000

  • SD451图片代号:B-10

  • SD451vtest:45

  • SD451htest:999900

  • SD451atest:10

  • SD451wtest:90

  • SD451代换 SD451用什么型号代替:BDT63,BDT65,BDW93,BDX33,

型号 功能描述 生产厂家&企业 LOGO 操作
SD45

Discrete Diodes

文件:109.53 Kbytes Page:2 Pages

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SIRECTIFIER

FAST RECOVERY DIODES Stud Version

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技

Vishay

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技

Vishay

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技

Vishay

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技

Vishay

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0µsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技

Vishay

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0μsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技

Vishay

Fast Recovery Diodes (Stud Version), 400/450 A

FEATURES •Highpowerfastrecoverydiodeseries •2.0to3.0μsrecoverytime •Highvoltageratingsupto2500V •Highcurrentcapability •Optimizedturn-onandturn-offcharacteristics •Lowforwardrecovery •Fastandsoftreverserecovery •Compressionbondedencapsulation •Studv

VishayVishay Siliconix

威世科技

Vishay

FAST RECOVERY DIODES Stud Version

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FAST RECOVERY DIODES

Features ■HighpowerFASTrecoverydiodeseries ■2.0to3.0µsrecoverytime ■Highvoltageratingsupto2500V ■Highcurrentcapability ■Optimizedturnonandturnoffcharacteristics ■Lowforwardrecovery ■Fastandsoftreverserecovery ■Compressionbondedencapsulation ■Studve

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SD45产品属性

  • 类型

    描述

  • 型号

    SD45

  • 功能描述

    Analog IC

更新时间:2024-5-17 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
士兰
23+
SOP-8
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
SILAN/士兰微
22+
SOP-8
100000
代理渠道/只做原装/可含税
SAWNIC
23+
na
18000
SILAN
20+
SOP-8
32500
原装优势主营型号-可开原型号增税票
士兰微
22+
SOP-8-225-1.27
45000
士兰微全系列渠道在售
SILAN(士兰微)
24+
SOP-8
5000
诚信服务,绝对原装原盘。
SL
22+
ESOP8
9250
绝对原装现货,价格低,欢迎询购!
JABES
1836+
9852
只做原装正品现货!或订货假一赔十!
SILAN/士兰微
22+
SOP
6000
进口原装 假一罚十 现货
SILAN/士兰微
21+
SOP-8
18000

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