FAST RECOVERY DIODES Hockey Puk Version

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Fast Recovery Diodes (Hockey PUK Version), 375 A

FEATURES • High power FAST recovery diode series • 4.5 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to

Fast Recovery Diodes (Hockey PUK Version), 375 A

FEATURES • High power FAST recovery diode series • 4.5 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to

Fast Recovery Diodes (Hockey PUK Version), 375 A

FEATURES • High power FAST recovery diode series • 4.5 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to

Fast Recovery Diodes (Hockey PUK Version), 375 A

FEATURES • High power FAST recovery diode series • 4.5 µs recovery time • High voltage ratings up to 4500 V • High current capability • Optimized turn-on and turn-off characteristics • Low forward recovery • Fast and soft reverse recovery • Press PUK encapsulation • Case style conform to

Fast Recovery Diodes (Hockey PUK Version), 375 A

文件：217.79 Kbytes Page：9 Pages

Fast Recovery Diodes (Hockey PUK Version), 375 A

Fast Recovery Diodes (Hockey PUK Version), 375 A

文件：217.79 Kbytes Page：9 Pages

Fast Recovery Diodes (Hockey PUK Version), 375 A

文件：217.79 Kbytes Page：9 Pages

Fast Recovery Diodes (Hockey PUK Version), 375 A

文件：217.79 Kbytes Page：9 Pages

Fast Recovery Diodes (Hockey PUK Version), 375 A

文件：217.79 Kbytes Page：9 Pages

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

Darlington Phototransistor

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