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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF |   | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.5 to 2.0 µs recovery time ■ High voltage ratings up to 1600V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
封装/外壳：DO-205AB，DO-9，接线柱 包装：管件 描述：DIODE GEN PURP 400V 250A DO205AB 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
DIODE GEN PURP 400V 250A DO205AB | VishayVishay Siliconix 威世威世科技公司 | |
SD253N04产品属性
- 类型
描述
- 型号
SD253N04
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
FAST RECOVERY DIODES Stud Version
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
|||
IR |
22+ |
MODULE |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
23+ |
MODULE |
8000 |
只做原装现货 |
|||
Vishay General Semiconductor - |
25+ |
DO-205AB(DO-9) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
SD253N04规格书下载地址
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DdatasheetPDF页码索引
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