350W UNIDIRECTIONAL TVS DIODES

DESCRIPTION The S D03 SD36 i s available in SO D 3 23 p a ckage FEATURES ⚫ IEC6100-4-2 (ESD) ±15kV (air), ±8kV (contact) ⚫ IEC6100-4-4 (EFT) 40A (5/50ηs) ⚫ 350 Watts Peak Pulse Power per (tp=8/20μs) ⚫ Protects one I/O line (unidirectional) ⚫ Low clamping voltage ⚫ Working voltage: 3.3V

TRANSIENT VOLTAGE SUPPRESSOR

Features Unidirection:450 Watts peak pulse power per line(tp=8/20μs) Replacement for MLV (0805) Protects one power or I/O port Low clamping voltage Applied to the type 3V and 36V 61000-4-2 (ESD): Air 30kV, Contact 30kV

Unidirectional TVS Diodes

FEATURES IEC61000-4-2 (ESD) #15kV (air), +8KkV (contact) IEC61000-4-4 (EFT) 40A (5/50ns) 350 Watts Peak Pulse Power per (tp=8/20ps) Protects one 1/0 line (unidirectional) Low clamping voltage Working voltages : 3.3V to 36V Low leakage current APPLICATIONS Cell Phone Hands

Unidirectional TVS Diodes

Description The SDxx Series is designed for applications requiring transient over voltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Thes

TVS ARRAY

350 Watts peak pulse power (tp = 8/20μs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±25kV (air), ±10kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20μs) Small package for use in portable electronics Suitable replacement for MLV’ s in ESD protec

Single Line TVS Diode

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Unidirectional TVS Diodes

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Standard Capacitance TVS Diode

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封装/外壳：SC-76，SOD-323 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TVS ARRAY 18V SOD-323 电路保护 TVS - 二极管

320W Unidirectional TVS Diode

High-Current Switching Applications

Features · Adoption of FBET, MBIT processes. · Large current capacity and wide ASO. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller. Applications · Voltage regulators, relay drivers, lam

1-Line High Power TVS Diode

Features ●6400W peak pulse power (8/20uS) ●Low leakage: nA level ●Operating voltage: 18V ●Ultra low clamping voltage ●One power line protects ●Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge: ±30kV – IEC61000-4-5 (Lightning)

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

Driver Applications????

Features · High DC current gain. · Low saturation voltage Applications · Motor drivers, hammer drivers, relay drivers

RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS

DESCRIPTION The SD1855 is a silicon NPN planar transistor designed for high gain linear performance at 2.0 GHz. This part uses gold metallized die and poly silicon site ballasting to achieve high reliability and ruggedness. The SD1855 can be used for applications sucha as telecommunications, rada

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1888-03 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. Agold metallized emitter-ballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operatin

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

SILICON SCHOTTKY BARRIER DIODE

Features • Small surface mounting type • Ultra low VF • High reliability

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1891-03 is a 28 V silicon NPN transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ■ 1.65 GHz ■ 28 VOLTS ■ GOLD METALLIZED SYSTEM ■ POLY

Chip Type 2C1893 Geometry 4500 Polarity NPN

Chip type 2C1893 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for medium power amplifier and switching applications. Features: • Medium power ratings

Chip Type 2C1893 Geometry 4500 Polarity NPN

Chip type 2C1893 by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for medium power amplifier and switching applications. Features: • Medium power ratings

RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

DESCRIPTION The SD1894 is a common base silicon NPN bipolar device optimized for 1.6 GHz SATCOM applications. The SD1894 offers superior gain and collector efficiency, making it an ideal choice for Class C power amplifiers used in portable as well as fixed SATCOM terminals. ■ CLASS C ■ 1.6 GHz

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1895-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ■ 1.65 GHz ■ 28 VOLTS ■ OVERLAY DIE GEOMETRY ■

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1895-03 is a 28 V silicon NPN planar transistor designed for INMARSAT and other 1.6 GHz SATCOM applications. This device utilizes polysilicon site ballasting with a gold metallized die to achieve high reliability and ruggedness. ■ 1.65 GHz ■ 28 VOLTS ■ OVERLAY DIE GEOMETRY ■

RF & MICROWAVE TRANSISTORS 1.65 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1897 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitter ballasted die geometry is employed providing high gain and efficiency while ensuring long term re liability and ruggedness under severe oper

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

DESCRIPTION The SD1898 is a 28 V Class C silicon NPN transistor designed for INMARSAT and other 1.65 GHz SATCOM applications. A gold metallized emitterballasted die geometry is employed providing high gain and efficiency while ensuring long term reliability and ruggedness under severe operating c

RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

DESCRIPTION The SD1899 is a common base silicon NPN bipolar device optimized for 1.6 GHz SATCOM applications. SD1899 offers superior gain and collector efficiency, making it an ideal choice for Class C power amplifiers used in portable as well as fixed SATCOM terminals. ■ REFRACTORY/GOLD METALL

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1899 is a Common Base Device Designed for class C Applications. FEATURES INCLUDE: • Gold Metalization • Input/Output Matching • Diffused Ballast Resistors

TVS ARRAY

350 Watts peak pulse power (tp = 8/20μs) Transient protection for data lines to IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact) IEC 61000-4-4 (EFT) 40A (5/50ns) IEC 61000-4-5 (Lightning) 24A (8/20μs) Small package for use in portable electronics Suitable replacement for MLV’ s in ESD protect

Unidirectional TVS Diodes

Description The SDxxC Series is designed for applications requiring transient over voltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. The

TVS ARRAY

Protects 3.3, 5, 8, 12, 15, 18, 24V Components 350 Watts Peak Pulse Power per Line (tp = 8/20μs) Unidirectional Configurations Replacement for MLV (0805) Protects One Power or I/O Port Low Clamping Voltage Terminals finish: 100 Pure Tin “-A” is an AEC-Q101 qualified device This is a Pb-fre

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

High Power Density, Low Profile, Shielded Inductors

[COOPER Bussmann] Description • Six sizes of shielded drum core inductors with low profiles (as low as 1.0mm) and high power density • Inductance range from .47uH to 1000uH • Current range from 6.00 to 0.088 Amps • Ferrite shielded, low EMI Applications • Digital cameras,

ATTENUATOR, 15 dB 2W, TNC

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ATTENUATOR, 20 dB 2W, TNC

文件：68.57 Kbytes Page：1 Pages

ATTENUATOR, 3 dB 2W ,TNC

文件：80.07 Kbytes Page：1 Pages

ESD静电保护元件

SAW双工器

SD Series High Power Density, Low Profile, Shielded Inductors

文件：309.34 Kbytes Page：7 Pages

SD Series High Power Density, Low Profile, Shielded Inductors

文件：309.34 Kbytes Page：7 Pages