SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION The µPA1726 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0

MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE FEATURES • 2.5-V gate drive and low on-resistance RDS(on)1 = 9.1 mΩ MAX. (VGS = 4.5 V, ID = 6.0 A) RDS(on)2 = 10.0 mΩ MAX. (VGS = 4.0 V, ID = 6.0 A) RDS(on)3 = 12.5 mΩ MAX. (VGS = 2.5 V, ID = 6.0 A) • Low Ciss: Ciss = 2700 pF TYP. • Built

Customer Specification

Construction Diameters (In) 1) Component 1 15 X 1 COND a) Conductor 20 (26/34) AWG Tinned Copper 0.038 b) Insulation 0.015 Wall, Nom. Polyethylene(PE) 0.068 (1) Color Code Alpha Wire Color Code H Cond Color Cond Color Cond Color 1 BLACK 6 BLUE 11 WHITE/BLACK 2 WHITE 7 BROWN 12 WHITE/RED 3

PRECISION ULTRA MICROPOWER CMOS OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1726/ALD1726G is a monolithic precision CMOS ultra micropower high slew-rate, high performance operational amplifier intended for a broad range of analog applications using ±1V to ±5V dual power supply systems, as well as +2V to +10V battery operated systems. All de

EPAD??ULTRA MICROPOWER OPERATIONAL AMPLIFIER

GENERAL DESCRIPTION The ALD1726E is a monolithic rail-to-rail ultra-micropower precision CMOS operational amplifier with integrated user programmable EPAD (Electrically Programmable Analog Device) based offset voltage adjustment. The ALD1726E is a direct replacement of the ALD1706 operational amp

Snap-In Universal Strain Relief Bushings

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16-bit Constant Current LED Driver

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