TRANSIENT VOLTAGE SUPPRESSOR

Features Unidirection:450 Watts peak pulse power per line(tp=8/20μs) Replacement for MLV (0805) Protects one power or I/O port Low clamping voltage Applied to the type 3V and 36V 61000-4-2 (ESD): Air 30kV, Contact 30kV

Surface Mount High Current Density Schottky Rectifiers 1.0 Amp 40V

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Schottky Diode

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS C, BASE STATIONS

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1407 is a 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused emitter ballasting for improved ruggedness and reliability. ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON EMITTER ■ GOLD METALLIZATIO

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1407 is a class AB common Emitter Transistor Designed for broadband amplifier operations up to 30 MHz. FEATURES: • PG = 15 dB min. at 125 W/30 MHz • High linear power output • IMD3 = -30 dBc max. at 125 W(PEP) • Omnigold™ Metalization System

RF & MICROWAVE TRANSISTORS 806-866MHz CLASS C, MOBILE APPLICATIONS

RF & MICROWAVE TRANSISTORS 806-866MHz CLASS C, MOBILE APPLICATIONS

LOW VF S URFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Plastic package has Underwriters Laboratory Flammability classification 94V-0 Utilizing Fame Retardant Epoxy Molding Compound For surface mount applications Low leakage current.

1.0 Amp Schottky Barrier Rectifiers

Voltage Range 20 to 100 Volts Current 1.0 Amperes Features ◇ Low forward voltage ◇ Extremely Low thermal resistance ◇ High Current Capability ◇ For surface mount application ◇ Higher temp soldering: 260OC for 10 seconds at terminals

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1411 is a silicon NPN transistor designed for telecommunications in HF and VHF frequency bands. This device utilizes gold metallized die with diffused emitter resistors to achieve high reliability and ruggedness. ■ 30 MHz ■ 40 VOLTS ■ IMD −30 dB ■ COMMON EMITTER ■ GOLD META

RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS

DESCRIPTION The SD1414 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed for amplifier applications in the 806 - 866 MHz frequency range. Internal input matching and common base configuration assure optimum gain and efficiency across the entire frequency band. The SD1414 withst

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1414 is Designed for FM Land Mobile Applications up to 836 MHz. FEATURES: • Internal Input Matching Network • PG = 5.0 dB at 45 W/836 MHz • Omnigold™ Metalization System

RF & MICROWAVE TRANSISTORS 800-900 MHz APPLICATIONS

DESCRIPTION The SD1414-12 is a 13.5 V Class C Epitaxial silicon NPN planar transistor designed for amplifier applications up to 960 MHz. Internal input matching and common base configuration assure optimum gain and efficiency in broad band applications. ■ 960 MHz ■ 13.5 VOLTS ■ COMMON BASE ■

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1420 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class A operation Cellular Base Station applications. The SD1420 is also available in a studless package as the SD1420-01. ■ 860 - 960 MHz ■ 24 VOLTS ■ COMMON EMITTER ■ GOLD METALLI

RF & MICROWAVE TRANSISTORS 860-900 MHz CLASS AB BASE STATIONS

DESCRIPTION The SD1420 is a gold metallized epitaxial silicon NPN planar transistor designed for high linearity Class A operation Cellular Base Station applications. The SD1420 is also available in a studless package as the SD1420-01. ■ FREQUENCY 860 - 960 MHz ■ POWER OUT 2.1W ■ VOLTAGE 24V ■

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

RF AND MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS

DESCRIPTION: The SD1420-01 is a gold metallized epitaxial silicon NPN planar transistor designed for high-linearity Class A operation Cellular Base Station applications. The SD1420-01 is also available in a stud package as the SD1420. Features · 860 – 960 MHz · 24 VOLTS · COMMON E

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

RF & MICROWAVE TRANSISTORS 450-512 MHz CLASS C, MOBILE APPLICATIONS

RF & MICROWAVE TRANSISTORS 450-512 MHz CLASS C, MOBILE APPLICATIONS

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The MS1429-03 is an epitaxial silicon NPN planar transistor designed for broadband applications in the 450-512MHz land Mobile radio band. This device utilizes diffused emitter resistors to withstand 20:1 VSWR at rated operating conditions. Features • 470 MHz • 12.5 VOLTS • POUT =

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

RF & MICROWAVE TRANSISTORS 800-960MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1423 is a gold metallization epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation for cellular base station applications. The SD1423 is designed as a medium power output device or as the driver for the SD1424. ■

RF & MICROWAVE TRANSISTORS 800-900 MHz BASE STATION APPLICATIONS

DESCRIPTION The SD1424 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station application. ■ 800 - 900 MHz ■ 24 VOLTS ■ COMMON EMITTER ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1425 is Designed for Class AB Linear Base Station Applications in the 800-900 MHz Frequency Range. FEATURES INCLUDE: • Gold Metalization • Input Matching • Common Emitter • Emitter Ballast Resistors

RF & MICROWAVE TRANSISTORS

DESCRIPTION The SD1429 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes “Tuned Q” technology which consists of an input matching network on the base to achieve optimum gain and broadband characteristics. KEY FEATURES ■ 4

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION: The SD1429-03 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. It withstands infinite VSWR at rated operating conditions. Features • 470 MHz • 12.5 VOLTS • POUT = 15.0 WATTS • GP = 7.5 dB MINIMUM • COMMON EMITTER CONFIGURATION

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION The SD1434 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes diffused emit ter resistors to achieve infinite VSWR under oper ating conditions. . 470 MHz . 12.5 VOLTS . COMMON EMITTER . POUT = 45

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1434 is a gold metallized RF power transistor designed for 12.5 V class-C UHF communication applications. The device utilizes emitter ballasting to achieve high reliability and ruggedness. FEATURES: • Internal Input Matching Network • PG = 5.0 dB at 45 W/470 MH

RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION The SD1437 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V. Gold metallization and emitter ballasting assure high reliability under Class A linear amplifier operation. ■ 860 MHz ■ COMMON EM

RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION The SD1439 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V. Gold metallization and emitter ballasting assure high reliability under Class A linear amplifier operation. ■ 860 MHz ■ COMMON EM

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1441is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. FEATURES: • 175 MHz 12.5 V • PG= 5.0 dB at 150 W/175 MHz • Omnigold™ Metalization System •Common Emitter configuration

RF & MICROWAVE TRANSISTORS 450-512 MHz CLASS C, MOBILE APPLICATIONS

RF & MICROWAVE TRANSISTORS 450-512 MHz CLASS C MOBILE APPLICATIONS

RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS

DESCRIPTION: The SD1444 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device is packaged in a grounded emitter TO-39 package for increased power gain and optimum heat dissipation. Features · 470 MHz · 12.5 VOLTS · POUT = 4.0 WAT

SILICON NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1444 is designed for large signal power amplifier applications operating in the 250-512 MHz range. FEATURES: • Common Emitter • POUT = 4.0 Watts • 12.5 Volts

HF to 2000 MHz Class AB Common Source - PowerSO-10RF

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2 to

RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS

HF to 2000 MHz Class AB Common Source - PowerSO-10RF VHF / UHF radio and digital cellular BTS applications HF to 2000MHz class AB common source - PowerFLAT VHF / UHF radio applications HF to 2000MHz class AB common cource - ceramic packages UHF TV and digital cellular BTS applications 2

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

Switching Regulators

Introduction/Basic Operation In switching regulator applications the inductor is used as an energy storage device. When the semiconductor switch is on the current in the inductor ramps up and energy is stored. When the switch turns off energy is released into the load. The amount of energy stored

RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION The SD1448 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V. Gold metallization and emitter ballasting assure high reliability under Class A linear amplifier operation. ■ 860 MHz ■ 25 VOLTS

RF & MICROWAVE TRANSISTORS UHF TVLINEAR APPLICATIONS

DESCRIPTION The SD1449 is a silicon NPN bipolar device specifically designed for high linearity applications in the UHF frequency range including TV Bands IV and V. Gold metallization and emitter ballasting assure high reliability under Class A linear amplifier operation. . 860 MHz .

Silicon NPN epitaxial planer type(For low-frequency amplification)

For low-frequency amplification ■Features •Optimum for high-density mounting •Allowing supply with the radial taping •Low collector-emitter saturation voltage VCE(sat)