RF & MICROWAVE TRANSISTORS 450-512MHz CLASS C MOBILE APPLICATIONS

DESCRIPTION: The SD1444 is a 12.5V epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device is packaged in a grounded emitter TO-39 package for increased power gain and optimum heat dissipation. Features · 470 MHz · 12.5 VOLTS · POUT = 4.0 WAT

SILICON NPN RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1444 is designed for large signal power amplifier applications operating in the 250-512 MHz range. FEATURES: • Common Emitter • POUT = 4.0 Watts • 12.5 Volts

RF & MICROWAVE TRANSISTORS 450-512 MHz CLASS C, MOBILE APPLICATIONS

RF & MICROWAVE TRANSISTORS 450-512 MHz CLASS C MOBILE APPLICATIONS

封装/外壳：TO-205AD，TO-39-3 金属罐 包装：散装 描述：RF TRANS NPN 16V 512MHZ TO39 分立半导体产品 晶体管 - 双极（BJT）- 射频

SILICON NPN RF POWER TRANSISTOR

RF BJT

RF/Microwave Si BJT Power Devices & Pallets

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1444 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion.Standard Product AOL1444 is Pb-free (meets ROHS & Sony 2

N-Channel Enhancement Mode Field Effect Transistor

General Description The AOL1444 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion.Standard Product AOL1444 is Pb-free (meets ROHS & Sony 2

Externally controlled motor speed regulation

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Low-Voltage Full-Bridge Brushless DC Motor Driver

文件：405.68 Kbytes Page：9 Pages

N-Channel Enhancement Mode Field Effect Transistor

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