SiC N-Channel MOSFET

FEATURES ·Very tight variation of on-resistance vs. temperature ·Very high operating junction temperature capability ·Very fast and robust intrinsic body diode APPLICATIONS ·DC-DC converters ·UPS ·SMPS ·Motor drives

碳化硅功率MOSFET，1200 V、12 A、520 mOhm（典型值，TJ = 150 C），HiP247封装

High voltage DC-DC converters

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Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package

Features • AEC-Q101 qualified • Very tight variation of on-resistance vs. temperature • Very high operating temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Motor drives • EV chargers • High voltage DC-DC converters • Swi

汽车级碳化硅功率MOSFET，1200 V、12 A、520 mOhm（典型值，TJ = 150 C），HiP247封装

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package

35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

35A, 1200V, NPT Series N-Channel IGBT

The HGTG10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a b

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG10N120BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a b

Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package

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