Features

• AEC-Q101 qualified

• Very tight variation of on-resistance vs. temperature

• Very high operating temperature capability (TJ = 200 °C)

• Very fast and robust intrinsic body diode

• Low capacitance

Applications

• Motor drives

• EV chargers

• High voltage DC-DC converters

• Switch mode power supplies

Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative

properties of wide bandgap materials. This results in unsurpassed on-resistance per

unit area and very good switching performance almost independent of temperature.

The outstanding thermal properties of the SiC material, combined with the device’s

housing in the proprietary HiP247 package, allows designers to use an industrystandard

outline with significantly improved thermal capability. These features render

the device perfectly suitable for high-efficiency and high power density applications.