Commutating Capacitors Film-Paper/Extended Foil Commutating Capacitor

Type SCRN Film-Paper/Extended Foil Commutating Capacitor Type SCRN capacitors are for SCR (silicon controlled rectifier) commutating applications that require high peak and rms current capability. These capacitors are ideal for other high frequency and pulsed applications. The SCRN is supplied in

Type SCRN Film-Paper/Extended Foil Commutating Capacitor

Type SCRN Film-Paper/Extended Foil Commutating Capacitor Type SCRN capacitors are for SCR (silicon controlled rectifier) commutating applications that require high peak and rms current capability. These capacitors are ideal for other high frequency and pulsed applications. The SCRN is supplied in

封装/外壳：径向，Can 包装：托盘 描述：CAP FILM 10UF 10% 200VPK RADIAL 电容器 薄膜电容器

FILM, PAPER-FILM CAPACITORS

P-channel enhancement mode MOS transistor

GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH203 is supplied in the SOT23 subminiature sur

Dual N-channel enhancement mode TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHN203 is supplied in the SOT96

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features low feedback and output capacitances

SCHOTTKY BARRIER RECTIFIERS(2.0A,20-60V)

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.