80 Amp Schottky Rectifier

• Schottky Barrier Rectifier • 175 °C Junction Temperature • Guard Ring Protection • Reverse Energy Tested • VRRM - 40 to 50 Volts • 80 Amperes

SCHOTTKY RECTIFIER

Schottky Rectifier 80 A Avg; VRRM up to 50 Volts ■ Guard ring reverse protection ■ 50 Volts VRRM / VRWM ■ 80 Amperes ■ 175 ° (Tj)

80 Amp Schottky Rectifier

文件：140.58 Kbytes Page：2 Pages

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：DIODE SCHOTTKY 80A 50V DO5 分立半导体产品 二极管 - 整流器 - 单

Diode Schottky 50V 80A 2-Pin DO-5

Diode and Rectifier Devices

封装/外壳：DO-203AB，DO-5，接线柱 包装：卷带（TR） 描述：DIODE SCHOTTKY 50V 80A DO203AB 分立半导体产品 二极管 - 整流器 - 单

Diode and Rectifier Devices

80 Amp Schottky Rectifier

文件：140.58 Kbytes Page：2 Pages

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

isc Silicon NPN Power Transistor

DESCRIPTION • With SOT-23 packaging • High collector-base voltage • Low saturation voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Audio output stage and converters/inverters circuits

NPN EPITAXIAL SILICON PLANAR TRANSISTOR

GENERAL DESCRIPTION The 8050 is an NPN epitaxial silicon planar transistor designed for use in the audio output stage and converter/inverter circuit. Complementary to 8550.

NPN TRANSISTOR

Power Dissipation Pcm : 1.0W Collector Current Icm : 1.5A Collector-Base Voltage Vcbo: 45V

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. On special request, these transistors can be manufactured in different pin configurations.