60 Amp Schottky Rectifier

60 Amp Schottky Rectifier ● Schottky Barrier Rectifier ● Guard Ring Protection ● 150°C Junction Temperature ● VRRM - 35 to 45 Volts ● Reverse Energy Tested

60 Amp Schottky Rectifier

文件：121.7 Kbytes Page：2 Pages

封装/外壳：DO-203AB，DO-5，接线柱 包装：散装 描述：SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：DO-208AA 包装：散装 描述：POWER SCHOTTKY 分立半导体产品 二极管 - 整流器 - 单

60 Amp Schottky Rectifier

文件：121.7 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV® N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 17A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.45Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

SINGLE POLE, SINGLE THROW CONNECTORIZED SWITCHES

文件：40.48 Kbytes Page：1 Pages