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SBR30M40CT价格
参考价格：￥4.7152
型号：SBR30M40CTFP 品牌：Diodes 备注：这里有SBR30M40CT多少钱，2025年最近7天走势，今日出价，今日竞价，SBR30M40CT批发/采购报价，SBR30M40CT行情走势销售排行榜，SBR30M40CT报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
30A SBR짰 SUPER BARRIER RECTIFIER 文件：130.039 Kbytes Page：5 Pages | DIODES 美台半导体 |   | ||
Low Forward Voltage Drop 文件：130.039 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SBR 40V 15A ITO220AB 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | | ||
SBR | DIODES 美台半导体 | | ||
30A SBR짰 SUPER BARRIER RECTIFIER 文件：130.039 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
30A SBR짰 SUPER BARRIER RECTIFIER 文件：130.039 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Low Forward Voltage Drop 文件：130.039 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
封装/外壳：TO-220-3 全封装，隔离接片 包装：管件 描述：DIODE ARRAY SCHOTTKY 分立半导体产品 二极管 - 整流器 - 阵列 | DIODES 美台半导体 | | ||
30A SBR짰 SUPER BARRIER RECTIFIER 文件：130.039 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Low Forward Voltage Drop 文件：130.039 Kbytes Page：5 Pages | DIODES 美台半导体 | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body | ADPOW | | ||
POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body | ADPOW | | ||
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Fas | ADPOW | |
SBR30M40CT产品属性
- 类型
描述
- 型号
SBR30M40CT
- 功能描述
肖特基二极管与整流器 RECTIFIER 40V 250A
- RoHS
否
- 制造商
Skyworks Solutions, Inc.
- 产品
Schottky Diodes
- 峰值反向电压
2 V
- 正向连续电流
50 mA
- 配置
Crossover Quad
- 正向电压下降
370 mV
- 最大功率耗散
75 mW
- 工作温度范围
- 65 C to + 150 C
- 安装风格
SMD/SMT
- 封装/箱体
SOT-143
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
美台 |
24+ |
TO-220F |
5000 |
全新原装正品,现货销售 |
|||
DIODES |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
|||
Diodes |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
美台 |
24+ |
TO-220F |
12000 |
原装正品 假一罚十 可拆样 |
|||
DIODES/美台 |
25+ |
TO-2F |
860000 |
明嘉莱只做原装正品现货 |
|||
Diodes |
22+ |
ITO220AB |
9000 |
原厂渠道,现货配单 |
|||
DIODES/美台 |
24+ |
NA/ |
3697 |
原厂直销,现货供应,账期支持! |
|||
Diodes |
25+ |
SOT-89 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
美台 |
26+ |
TO-220F |
12000 |
原装，正品 |
|||
DIODES/美台 |
24+ |
TO-220F |
65300 |
一级代理/放心购买! |
SBR30M40CT规格书下载地址
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DdatasheetPDF页码索引
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