型号 功能描述 生产厂家 企业 LOGO 操作
SBR30M40CTFP-JT

封装/外壳:TO-220-3 全封装,隔离接片 包装:管件 描述:DIODE ARRAY SCHOTTKY 分立半导体产品 二极管 - 整流器 - 阵列

DIODES

美台半导体

30A SBR짰 SUPER BARRIER RECTIFIER

文件:130.039 Kbytes Page:5 Pages

DIODES

美台半导体

Low Forward Voltage Drop

文件:130.039 Kbytes Page:5 Pages

DIODES

美台半导体

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

ADPOW

POWER MOS V FREDFET

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.. • Fas

ADPOW

更新时间:2025-10-7 16:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
25+23+
TO220-3
29418
绝对原装正品全新进口深圳现货
DIODES/美台
25+
TO-2
860000
明嘉莱只做原装正品现货
Diodes
24+
TO-220AB
148
DIODES
25+
TO-220
6000
只做原装进口!正品支持实单!
DIODES/美台
23+
TO-220
7000
DIODES/美台
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
DIODES/美台
TO-220
8172
一级代理 原装正品假一罚十价格优势长期供货
DIODES美台
20+
TO220-3
38560
原装优势主营型号-可开原型号增税票
DIODES
14+
TO-220
6000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
DIODES/美台
2022+
TO-220
6000
原厂代理 终端免费提供样品

SBR30M40CTFP-JT数据表相关新闻