Schottky Barrier Diode

Features • Low switching noise • Low reverse current (VR=16V, IR max=15µA) Applications • High frequency rectification (switching regulators, converters, and choppers)

Schottky Barrier Diode 30 V, 1 A, Low IR

Features • Low Switching Noise • Low Reverse Current (VR = 16 V, IR Max=15 A) • This Device is Pb−Free and Halide Free Applications • High Frequency Rectification (Switching Regulators, Converters, and Choppers)

Schottky Barrier Diode 30V, 1.0A Rectifier

30V, 1.0A Rectifier Features • Low switching noise. • Low reverse current (VR=16V, IR max=15μA). Applications • High frequency rectification (switching regulators, converters, and choppers).

Schottky Diodes

■ Features ● Low switching noise. ● Low reverse current ● High frequency rectification

肖特基势垒整流器，30V，1A，低 IR

SBE807 is Schottky Barrier Diode, 30V, 1A, Low IR for High frequency rectification Applications. • Low switching noise\n• Low reverse current (VR=16V, IR max=15A);

Schottky Barrier Diode 30 V, 1 A, Low IR

Features • Low Switching Noise • Low Reverse Current (VR = 16 V, IR Max=15 A) • This Device is Pb−Free and Halide Free Applications • High Frequency Rectification (Switching Regulators, Converters, and Choppers)

Schottky Diodes

■ Features ● Low switching noise. ● Low reverse current ● High frequency rectification ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish

Schottky Barrier Diode

Features • Low switching noise • Low reverse current (VR=16V, IR max=15µA) Applications • High frequency rectification (switching regulators, converters, and choppers)

Schottky Barrier Diode

Features • Low switching noise • Low reverse current (VR=16V, IR max=15µA) Applications • High frequency rectification (switching regulators, converters, and choppers)

Schottky Barrier Diode 30 V, 1 A, Low IR

Features • Low Switching Noise • Low Reverse Current (VR = 16 V, IR Max=15 A) • This Device is Pb−Free and Halide Free Applications • High Frequency Rectification (Switching Regulators, Converters, and Choppers)

封装/外壳：SC-74A，SOT-753 包装：管件 描述：DIODE ARRAY SCHOTTKY 30V 1A 5CPH 分立半导体产品 二极管 - 整流器 - 阵列

封装/外壳：SC-74A，SOT-753 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE ARRAY SCHOTTKY 30V 1A 5CPH 分立半导体产品 二极管 - 整流器 - 阵列

POWER TRANSISTORS(8.0A,150-200V,60W)

Single Element Detector

Element size 1,5x1,5 Thermally compensated option Designed for Gas Analysis applications The LHi 807 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications . It includes pyroelectric element with FET in source follower connection and is avaliab

Integrated Circuit TV Sound Channel, 1W

Description: The NTE807 is a complete 1Watt sound channel in a 16–Lead DIP type package and is ideally suited for use in small screen TV or mobile FM radios. This device operates from a single 14V supply and provides VCC/2 output tracking as well as greater than 20dB of ripple rejection. The NTE8

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

FEATURES • Low Current, High Gain |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 × 2SC5179)