1.0AMP. SCHOTTKY BARRIER RECTIFIERS

FEATURE • High current capability • Low forward voltage drop • Low power loss, high efficiency • High surge capability • High temperature soldering guaranteed 260°C /10sec/ 0.375 lead length at 5 lbs tension

SCHOTTKY BARRIER RECTIFIERS

REVERSE VOLTAGE - 20 to 200 Volts FORWARD CURRENT - 1.0 Amperes FEATURES ● Metal-Semiconductor junction with guard ring ​​​​​​​● Epitaxial construction ● Low forward voltage drop ● High current capability ● The plastic material carries UL recognition 94V-0 ● For use in low voltage,high fre

Power Schottky Rectifier - 1Amp 150~200Volt

□ Features - Low forward voltage drop - High current capability - High reliability - High surge current capability - Epitaxial construction

SCHOTTKY BARRIER RECTIFIER

Features The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction,majority carrier conduction Low power loss,high efficiency High forward surge current capability High temperature soldering guaranteed: 260 C/10 seconds,0.375”(9.5mm) lead l

1.0A HIGH VOLTAGE SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

SCHOTTKY BARRIER RECTIFIER

Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere FEATURES ✦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ✦ Metal silicon junction,majority carrier conduction ✦ Low power loss,high efficiency ✦ High forward surge current capability ✦

1.0A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

1.0Amp Schottky Barrier Rectifiers

Features ♦ The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 ♦ Low reverse leakage ♦ High forward surge current capability ♦ High temperature soldering guaranteed: ♦ Metal silicon junction,majority carrier conduction 250°C/10 seconds,0.375(9.5mm) le

DO-41 Plastic-Encapsulate Diodes

Schottky Rectifier Features ● Io 1A ● VRRM 150V-200V ● High surge current capability ● Polarity: Color band denotes cathode Applications ● Rectifier

SCHOTTKY BARRIER RECTIFIER

FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capability For use in low voltage,high frequency inverters free wheeling,and polarity protection applications The plastic material carries U/L recognition 94

1.0A 150V Schottky diode

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1.0 AMP SCHOTTKY BARRIER RECTIFIERS

文件：295.53 Kbytes Page：2 Pages

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

文件：295.53 Kbytes Page：2 Pages

SBD

肖特基二极管

1A,150V,Schottky Barrier Rectifiers

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

文件：295.53 Kbytes Page：2 Pages

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

文件：295.53 Kbytes Page：2 Pages

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

文件：295.53 Kbytes Page：2 Pages

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

文件：295.53 Kbytes Page：2 Pages

SCHOTTKY BARRIER RECTIFIERS

文件：68.89 Kbytes Page：2 Pages

Power Schottky Rectifier - 1Amp 150~200Volt

Power Schottky Rectifier - 1Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliability -High surge current capability -Epitaxial construction -Halogen-Free

1.0 AMP SCHOTTKY BARRIER RECTIFIERS

文件：295.53 Kbytes Page：2 Pages

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

MICROWAVE POWER TRANSISTORS

The RF Line Microwave Pulse Power Transistor Designed for Class B and C common base amplifier applications in short pulse TACAN, IFF, and DME transmitters. • Guaranteed Performance @ 1090 MHz, 50 Vdc Output Power = 150 Watts Peak Minimum Gain = 7.8 dB • 100 Tested for Load Mismatch

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N