Programmable Single-/Dual-/Triple- Tone Gong

Functional Description The SAE 800 is a single-tone, dual-tone or triple-tone gong IC designed for a very wide supply voltage range. Features ●Supply voltage range 2.8 V to 18 V ●Few external components (no electrolytic capacitor) ●1 tone, 2 tones, 3 tones programmable ●Loud

Programmable Single-/Dual-/Triple- Tone Gong

Functional Description The SAE 800 is a single-tone, dual-tone or triple-tone gong IC designed for a very wide supply voltage range. Features ●Supply voltage range 2.8 V to 18 V ●Few external components (no electrolytic capacitor) ●1 tone, 2 tones, 3 tones programmable ●Loud

功率控制芯片

Programmable Single-/Dual-/Triple- Tone Gong • Supply voltage range 2.8 V to 18 V\n • Few external components (no electrolytic capacitor)\n • 1 tone, 2 tones, 3 tones programmable\n • Loudness control\n • Typical standby current 1 mA\n • Constant current output stage\n • Highefficiency power stage\n • Shortcircuit protection\n • Thermal shutdo;

Programmable Single-/Dual-/Triple- Tone Gong

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封装/外壳：8-SOIC（0.154"，3.90mm 宽） 功能：音调处理器 包装：管件 描述：IC AUDIO TONE PROCESSOR DSO-8 集成电路（IC） 音频专用

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 功能：音调处理器 包装：卷带（TR） 描述：IC AUDIO TONE PROCESSOR DSO8-1 集成电路（IC） 音频专用

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

POWER TRANSISTORS(4.0A,60-80V,40W)

PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD The µPA800T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.9 dB TYP. @ f = 2 GHz, VCE = 1 V,

NSC800TM High-Performance Low-Power CMOS Microprocessor

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