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位置：首页 > IC中文资料 > S901

S901晶体管资料

  • S9010别名：S9010三极管、S9010晶体管、S9010晶体三极管

  • S9010生产厂家：

  • S9010制作材料：Si-N/P

  • S9010性质：通用型 （Uni）

  • S9010封装形式：

  • S9010极限工作电压：50V

  • S9010最大电流允许值：0.2A

  • S9010最大工作频率：300MHZ

  • S9010引脚数：

  • S9010最大耗散功率：0.5W

  • S9010放大倍数：β=900

  • S9010图片代号：NO

  • S9010vtest：50

  • S9010htest：300000000

  • S9010atest：0.2

  • S9010wtest：0.5

  • S9010代换 S9010用什么型号代替：BC547,

S901价格

参考价格：￥0.0500

型号：S9012 品牌：CJ 备注：这里有S901多少钱，2026年最近7天走势，今日出价，今日竞价，S901批发/采购报价，S901行情走势销售排行榜，S901报价。
型号 功能描述 生产厂家 企业 LOGO 操作
S9018

丝印代码：S9018Z；TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Gain Bandwidth Product

DGNJDZ

南晶电子

S9018-TA

丝印代码：S9018Z；TO-92 Plastic-Encapsulate Transistors

FEATURES High Current Gain Bandwidth Product

DGNJDZ

南晶电子

S9014

丝印代码：S9014Z；TO-92 Plastic-Encapsulate Transistors

文件：1.65522 Mbytes Page：5 Pages

DGNJDZ

南晶电子

S9014-TA

丝印代码：S9014Z；TO-92 Plastic-Encapsulate Transistors

文件：1.65522 Mbytes Page：5 Pages

DGNJDZ

南晶电子

S9011

丝印代码：1T；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor

LUGUANG

鲁光电子

S9011

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.31 W (Tamb=25℃) Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

S9011

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor.

DSK

S9011

Power dissipation

FEATURE Power dissipation PCM : 0.2 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

S9011

SILICON EPITAXIAL PLANAR TRANSISTOR

Features • Collector Current.(IC= 30mA） • Power dissipation.(PC=200mW) Mechanical Data • Case: SOT-23, Molded Plastic • Terminals: Solderable per MIL-STD-202, Method 208 • Polarity: See Diagrams • Approx. Weight: 0.008 grams

SUNMATE

森美特

S9011

丝印代码：1T；NPN Silicon Epitaxial Planar Transistor

FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor

BILIN

银河微电

S9011

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR（NPN） FEATURE Power dissipation PCM : 0.31 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃

DAYA

大亚电器

S9011

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN） FEATURE Power dissipation PCM : 0.31 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃

JIANGSU

长电科技

S9011LT1

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN ) FEATURES Power dissipation PCM: 0.2 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150

JIANGSU

长电科技

S9011LT1-SOT-23

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN ) FEATURES Power dissipation PCM: 0.2 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150

JIANGSU

长电科技

S9011-TO-92

TRANSISTOR竊?NPN 竊

TRANSISTOR（NPN） FEATURE Power dissipation PCM : 0.31 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃

JIANGSU

长电科技

S9012

TRANSISTOR(PNP)

FEATURES • Complementary to S9013 • Excellent hFE linearity

HTSEMI

金誉半导体

S9012

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Collector Current ● Complementary To S9013 ● Excellent hFE Linearity

JIANGSU

长电科技

S9012

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to S9013 ● Excellent hFE linearity

DAYA

大亚电器

S9012

TO-92 Plastic-Encapsulate Transistors

TRANSOSTOR (PNP) FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: -0.5 A Collector-basevoltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to+150°C

ETCList of Unclassifed Manufacturers

未分类制造商

S9012

丝印代码：2T1；PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

BILIN

银河微电

S9012

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

WEITRON

S9012

丝印代码：2T1；TRANSISTOR(PNP)

FEATURES Complementary to S9013 Excellent hFE linearity

GWSEMI

唯圣电子

S9012

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

DSK

S9012

丝印代码：2T1；TRANSISTOR (PNP)

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

SHUNYE

顺烨电子

S9012

丝印代码：2T1；PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

S9012

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to S9013

HOTTECH

合科泰

S9012

丝印代码：2T1；PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

LUGUANG

鲁光电子

S9012

丝印代码：2T1；TRANSISTOR (PNP)

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

SY

顺烨电子

S9012

PNP EPITAXIAL PLANAR TRANSISTOR

Description The S9012 is designed for use in 1W output amplifier of portable radiosin class B push-pull operation. Features • High total power dissipation. (PT:625mW) • High collector current. (IC:500mA) • Complementary to S9013 • Excellent linearity.

TGS

S9012

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013

DGNJDZ

南晶电子

S9012

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : - 0.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

SECOS

喜可士

S9012

丝印代码：2T1；SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

UMW

友台半导体

S9012-G

PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

MCC

S9012-H

PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

MCC

S9012-H

丝印代码：2T1；PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

S9012-I

PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

MCC

S9012-J

丝印代码：2T1；PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

S9012-L

丝印代码：2T1；PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

S9012LT1

SOT-23 Plastic-Encapsulate Transistors

SOT-23 Plastic-Encapsulate Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

S9012LT1

PNP General Purpose Transistors

PNP General Purpose Transistors

WEITRON

S9012M

TRANSISTOR

DESCRIPTION PNP Epitaxial Silicon Transistor FEATURES Complementary to S9013M Excellent hFE linearity APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.)

JIANGSU

长电科技

S9012-SOT23

PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

S9012T

PNP Epitaxial Silicon Transistor

FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: -0.5 A Collector-basevoltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to+150°C

SECOS

喜可士

S9012W

丝印代码：2T1；SOT-323 Plastic-Encapsulate Transistors

FEATURES Complementary to S9013W Excellent hFE linearity

DGNJDZ

南晶电子

S9013

TRANSISTOR (NPN)

FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity

SHUNYE

顺烨电子

S9013

丝印代码：J3；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current.

LUGUANG

鲁光电子

S9013

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012

DGNJDZ

南晶电子

S9013

丝印代码：J3；TRANSISTOR (NPN)

FEATURES High Collector Current. Complementartyo S9012. ExcellenhtF E Linearity.

SY

顺烨电子

S9013

NPN EPITAXIAL PLANAR TRANSISTOR

Description The S9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features •High Total Power Dissipation. (PT:625mW) •High Collector Current. (IC:500mA) • Complementary to S9012 • Excellent linearity.

TGS

S9013

General Purpose Transistor

FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

SECOS

喜可士

S9013

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to S9012

HOTTECH

合科泰

S9013

丝印代码：J3；NPN Transistors

Features ● Excellent hFE linearity ● Collector Current :IC=0.5A

YFWDIODE

佑风微

S9013

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

S9013

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

DSK

S9013

丝印代码：J3；TRANSISTOR(NPN)

FEATURES Complementary to S9012 Excellent hFE linearity

GWSEMI

唯圣电子

S9013

Power dissipation

FEATURE Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

S9013

TRANSISTOR(NPN)

TRANSISTOR (NPN) FEATURES ● Complementary to S9012 ● Excellent hFE linearity

HTSEMI

金誉半导体

S9013

丝印代码：J3；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

LEIDITECH

雷卯电子

S9013

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Collector Current. ● Complementary to S9012. ● Excellent hFE Linearity.

JIANGSU

长电科技

S9013

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in 1W output amplifier of portable radios in class B push-pull operation.

DCCOM

道全

S901产品属性

  • 类型

    描述

  • Polarity：

    NPN

  • I(BR)CEOMin(V)：

    30

  • IC(A)：

    0.03

  • hFEMin：

    28

  • hFEMax：

    198

  • VCE(V)：

    5

  • VCE(sat)(V)：

    0.3

  • IC(mA)：

    10

  • IB(mA)：

    1

  • fTMin(MHz)：

    150

  • PTMMax(W)：

    0.2

  • Package Outlines：

    SOT-23

S901供应商更多...

更新时间：2026-7-24 11:42:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市科恒伟业电子有限公司
S9005
HAMAMATSU
2450+
DIP3
9850
只做原厂原装正品现货或订货假一赔十!
询价
上海鑫科润电子科技有限公司
S9001
Genesis
2002
MQFP
480
原装现货海量库存欢迎咨询
询价
贸泽芯城（深圳）电子科技有限公司
S9000
GENESIS/SAGE
23+
QFP144
3000
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
询价
现代芯城（深圳）科技有限公司
S9001菲涅尔透镜
26+
N/A
48000
一级代理-主营优势-实惠价格-不悔选择
询价
深圳市福安瓯科技有限公司
S9005
NEWCHIP
23+
MSOP8
28611
只做原装,专为终端工厂服务,BOM全配。
询价
艾睿（深圳）半导体有限公司
S9001菲涅尔透镜
森霸
2447
13.6*13.6*(4.0+6.0)mm
115000
500个/袋一级代理专营品牌!原装正品,优势现货,长期
询价
深圳市威尔健半导体有限公司
S9000
GENESIS/SAGE
23+
QFP144
50000
全新原装正品现货,支持订货
询价
深圳市毅创腾电子科技有限公司
S9000
SAGE
23+
QFP/144
7000
绝对全新原装!100%保质量特价!请放心订购!
询价
深圳市芯为科技有限公司
S90
TOKO
26+
SOT-153
50000
芯为深仓现货
询价
深圳市恒达亿科技有限公司
S9001
SAGE
25+
MQFP144
4500
全新原装、诚信经营、公司现货销售!
询价

S901芯片相关品牌

S901规格书下载地址

S901参数引脚图相关

S901数据表相关新闻

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