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S901晶体管资料
S9010别名：S9010三极管、S9010晶体管、S9010晶体三极管
S9010生产厂家：
S9010制作材料：Si-N/P
S9010性质：通用型 （Uni）
S9010封装形式：
S9010极限工作电压：50V
S9010最大电流允许值：0.2A
S9010最大工作频率：300MHZ
S9010引脚数：
S9010最大耗散功率：0.5W
S9010放大倍数：β=900
S9010图片代号：NO
S9010vtest：50
S9010htest：300000000
- S9010atest：0.2
S9010wtest：0.5
S9010代换 S9010用什么型号代替：BC547,
S901价格
参考价格：￥0.0500
型号：S9012 品牌：CJ 备注：这里有S901多少钱，2025年最近7天走势，今日出价，今日竞价，S901批发/采购报价，S901行情走势销售排行榜，S901报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SILICON EPITAXIAL PLANAR TRANSISTOR Features • Collector Current.(IC= 30mA） • Power dissipation.(PC=200mW) Mechanical Data • Case: SOT-23, Molded Plastic • Terminals: Solderable per MIL-STD-202, Method 208 • Polarity: See Diagrams • Approx. Weight: 0.008 grams | SUNMATE 森美特 |   | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor | BILIN 银河微电 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR（NPN） FEATURE Power dissipation PCM : 0.31 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃ | DAYA 大亚电器 | | ||
TRANSISTOR竊?NPN 竊 TRANSISTOR（NPN） FEATURE Power dissipation PCM : 0.31 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃ | JIANGSU 长电科技 | | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor | LUGUANG 鲁光电子 | | ||
TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.31 W (Tamb=25℃) Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● Collector Current.(IC= 30mA） ● Power dissipation.(PC=200mW) APPLICATIONS ● AM converter, AM/FM if amplifier general purpose transistor. | DSK | | ||
Power dissipation FEATURE Power dissipation PCM : 0.2 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃ | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
TRANSISTOR竊?NPN 竊 TRANSISTOR（NPN ) FEATURES Power dissipation PCM: 0.2 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 | JIANGSU 长电科技 | | ||
TRANSISTOR竊?NPN 竊 TRANSISTOR（NPN ) FEATURES Power dissipation PCM: 0.2 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ，Tstg: -55℃ to +150 | JIANGSU 长电科技 | | ||
TRANSISTOR竊?NPN 竊 TRANSISTOR（NPN） FEATURE Power dissipation PCM : 0.31 W（T amb=25℃） Collector current ICM: 0.03 A Collector-base voltage V(BR)CBO : 30 V Operating and storage junction temperature range Tj, Tstg: -55℃to +150℃ | JIANGSU 长电科技 | | ||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● High Collector Current ● Complementary To S9013 ● Excellent hFE Linearity | JIANGSU 长电科技 | | ||
TRANSISTOR(PNP) FEATURES • Complementary to S9013 • Excellent hFE linearity | HTSEMI 金誉半导体 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES ● Complementary to S9013 ● Excellent hFE linearity | DAYA 大亚电器 | | ||
TO-92 Plastic-Encapsulate Transistors TRANSOSTOR (PNP) FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: -0.5 A Collector-basevoltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to+150°C | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
PNP Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current. | BILIN 银河微电 | | ||
PNP General Purpose Transistors PNP General Purpose Transistors P/b Lead(Pb)-Free | WEITRON | | ||
TRANSISTOR(PNP) FEATURES Complementary to S9013 Excellent hFE linearity | GWSEMI 唯圣电子 | | ||
PNP Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current. | DSK | | ||
PNP Transistors Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A | YFWDIODE 佑风微 | | ||
Plastic-Encapsulate Transistors Plastic-Encapsulate Transistors FEATURES Complimentary to S9013 | HOTTECH 合科泰 | | ||
PNP Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current. | LUGUANG 鲁光电子 | | ||
TRANSISTOR (PNP) FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity | SY 顺烨电子 | | ||
PNP EPITAXIAL PLANAR TRANSISTOR Description The S9012 is designed for use in 1W output amplifier of portable radiosin class B push-pull operation. Features • High total power dissipation. (PT:625mW) • High collector current. (IC:500mA) • Complementary to S9013 • Excellent linearity. | TGS | | ||
PNP Silicon Epitaxial Planar Transistor PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013 | DGNJDZ 南晶电子 | | ||
PNP Silicon General Purpose Transistor FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : - 0.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C | SECOS 喜可士 | | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity | UMW 友台半导体 | | ||
PNP Silicon Transistors Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d | MCC | | ||
PNP Silicon Transistors Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d | MCC | | ||
PNP Transistors Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A | YFWDIODE 佑风微 | | ||
PNP Silicon Transistors Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d | MCC | | ||
PNP Transistors Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A | YFWDIODE 佑风微 | | ||
PNP Transistors Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A | YFWDIODE 佑风微 | | ||
PNP General Purpose Transistors PNP General Purpose Transistors | WEITRON | | ||
SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
TRANSISTOR DESCRIPTION PNP Epitaxial Silicon Transistor FEATURES Complementary to S9013M Excellent hFE linearity APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.) | JIANGSU 长电科技 | | ||
PNP Transistors Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A | YFWDIODE 佑风微 | | ||
PNP Epitaxial Silicon Transistor FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: -0.5 A Collector-basevoltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to+150°C | SECOS 喜可士 | | ||
SOT-323 Plastic-Encapsulate Transistors FEATURES Complementary to S9013W Excellent hFE linearity | DGNJDZ 南晶电子 | | ||
NPN Silicon Epitaxial Planar Transistor NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012 | DGNJDZ 南晶电子 | | ||
NPN EPITAXIAL PLANAR TRANSISTOR Description The S9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features •High Total Power Dissipation. (PT:625mW) •High Collector Current. (IC:500mA) • Complementary to S9012 • Excellent linearity. | TGS | | ||
TRANSISTOR (NPN) FEATURES High Collector Current. Complementartyo S9012. ExcellenhtF E Linearity. | SY 顺烨电子 | | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current. | LUGUANG 鲁光电子 | | ||
General Purpose Transistor FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C | SECOS 喜可士 | | ||
NPN Transistors Features ● Excellent hFE linearity ● Collector Current :IC=0.5A | YFWDIODE 佑风微 | | ||
Plastic-Encapsulate Transistors Plastic-Encapsulate Transistors FEATURES Complimentary to S9012 | HOTTECH 合科泰 | | ||
TRANSISTOR (NPN) FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ | WINNERJOIN 永而佳 | | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current. | DSK | | ||
TRANSISTOR(NPN) FEATURES Complementary to S9012 Excellent hFE linearity | GWSEMI 唯圣电子 | | ||
Power dissipation FEATURE Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃ | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | | ||
TRANSISTOR(NPN) TRANSISTOR (NPN) FEATURES ● Complementary to S9012 ● Excellent hFE linearity | HTSEMI 金誉半导体 | | ||
SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES ● High Collector Current. ● Complementary to S9012. ● Excellent hFE Linearity. | JIANGSU 长电科技 | | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current. | LEIDITECH 雷卯电子 | | ||
PLASTIC ENCAPSULATE TRANSISTORS [SHENZHEN SLS TECHNOLOGY CO.,LTD.] Features: PC and IC are larger, hFE linearity is good; Applications: Used in power amplifier circuit, complementary to S9012. | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1W output amplifier of portable radios in class B push-pull operation. | DCCOM 道全 | | ||
TO-92 Plastic-Encapsulate Transistors FEATURE Complementary to S9012 Excellent hFE linearity | DAYA 大亚电器 | | ||
NPN SILICON EPITAXIAL PLANAR TRANSISTOR Features • High Collector Current.(IC= 500mA） • Complementary To S9012. • Excellent HFE Linearity. • Power dissipation.(PC=300mW) | SUNMATE 森美特 | | ||
NPN Silicon Epitaxial Planar Transistor FEATURES ● High Collector Current.(IC= 500mA） ● Complementary To S9012. ● Excellent HFELinearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current. | BILIN 银河微电 | | ||
1W Output Amplifier of Potable Radios in Class B Push-pull Operation. 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity. | Fairchild 仙童半导体 | | ||
SOT-23 Plastic-Encapsulate Transistors FEATURES High Collector Current. Complementartyo S9012. ExcellenhtF E Linearity. | UMW 友台半导体 | |
S901产品属性
- 类型
描述
- 型号
S901
- 制造商
DAYA
- 制造商全称
DAYA
- 功能描述
TO-92 Plastic-Encapsulate Transistors
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CJ/长电 |
2023+ |
TO92 |
5000 |
原厂全新正品旗舰店优势现货 |
|||
长电 |
2430+ |
SOT23 |
8540 |
只做原装正品假一赔十为客户做到零风险!! |
|||
DIODES |
19+ |
SOT-323 |
11491 |
||||
S |
17+ |
SOT23 |
6200 |
100%原装正品现货 |
|||
CJ/长电 |
25+ |
SOT23 |
157372 |
明嘉莱只做原装正品现货 |
|||
长电 |
23+ |
SOT-23 |
60000 |
原装正品,假一罚十 |
|||
TOSHIBA |
24+ |
SOT-23 |
9200 |
新进库存/原装 |
|||
CJ |
18+ |
SOT-23 |
85600 |
保证进口原装可开17%增值税发票 |
|||
JSMSEMI(杰盛微) |
2447 |
SOT-23 |
105000 |
3000个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
TWGMC臺灣迪嘉 |
25+ |
SOT23 |
36000 |
TWGMC臺灣迪嘉原装现货S9015即刻询购立享优惠#长期有排单订 |
S901规格书下载地址
S901参数引脚图相关
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- S9013-L
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- S9012LT
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- S9012-G
- S9012
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S901数据表相关新闻
S8550 原装正品 直插三极管 TO-92
现货100K 长电
2022-7-4S9012 CJ/长电 SOT-23 支持原装长电订货型号，欢迎咨询！
S9012 CJ/长电 SOT-23
2021-5-17S9013 SOT-23 CJ/长电 NPN三极管 原装正品
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-29S9012，SSF10N90A，SSF17N60A，SSF22N50A，SSF25N40A，SSF45N20A
S9012，SSF10N90A，SSF17N60A，SSF22N50A，SSF25N40A，SSF45N20A
2020-3-12S8GC整流器原装热卖
S8GC全新原装正品现货热卖，假一罚十！价格优惠！欢迎新老客户来电咨询采购！
2019-11-5S8VK-WA开关电源S8VK-WA24024
欧姆龙的S8VK-WA采用独特的三相200 V电源，可减少设计复杂性并提高可靠性
2019-9-19
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