PNP EPITAXIAL PLANAR TRANSISTOR

Description The S9012 is designed for use in 1W output amplifier of portable radiosin class B push-pull operation. Features • High total power dissipation. (PT:625mW) • High collector current. (IC:500mA) • Complementary to S9013 • Excellent linearity.

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Collector Current ● Complementary To S9013 ● Excellent hFE Linearity

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to S9013

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : - 0.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

TRANSISTOR(PNP)

FEATURES Complementary to S9013 Excellent hFE linearity

TRANSISTOR (PNP)

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

TO-92 Plastic-Encapsulate Transistors

TRANSOSTOR (PNP) FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: -0.5 A Collector-basevoltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to+150°C

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA） ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to S9013 ● Excellent hFE linearity

TRANSISTOR(PNP)

FEATURES • Complementary to S9013 • Excellent hFE linearity

PNP General purpose Amplifier

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PNP Silicon Epitax ial Planar Transistor

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TRANSISTOR(PNP)

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TRANSISTOR (PNP)

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Plastic-Encapsulate Transistors

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PNP Silicon Epitaxial Planar Transistor

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PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

SOT-23 Plastic-Encapsulate Transistors

SOT-23 Plastic-Encapsulate Transistors

PNP General Purpose Transistors

PNP General Purpose Transistors

TRANSISTOR

DESCRIPTION PNP Epitaxial Silicon Transistor FEATURES Complementary to S9013M Excellent hFE linearity APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.)

PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

PNP Epitaxial Silicon Transistor

FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: -0.5 A Collector-basevoltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to+150°C

SOT-323 Plastic-Encapsulate Transistors

FEATURES Complementary to S9013W Excellent hFE linearity

PNP Silicon Epitaxial Planar Transistor

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General Purpose Transistor

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PNP Silicon Transistors

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封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS PNP 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：带盒（TB） 描述：TRANS PNP 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

PNP EPITAXIAL SILICON TRANSISTOR

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SOT-23 Plastic-Encapsulate Transistors

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PNP Epitaxial Silicon Transistor

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TO-92 Plastic-Encapsulate Transistors

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SOT-323T Plastic-Encapsulate Transistors

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Silicon PNP transistor

Features High PC and IC，excellent hFE linearity，complementary pair with 9013. Applications Amplifier of portable radios in class B push-pull operation.

NAND GATES/HEX INVERTERS

DESCRIPTION - The 8002, 9003, 9004, 9007, and 9012 are active LOW level output AND gates commonly know as NAND gates. The 9016 and 9017 are hex inverters with input and output characteristics identical to a NAND gate.

TO-92 Plastic-Encapsulate Transistors

TO-92 Plastic-Encapsulate Transistors

Miniature SIP Relays

Miniature Molded SIP Reed Relays The 9012 package dimensions are 47 smaller than standard 9000 SIPs, yet the relay retains the 10W switch ratings of its larger counterparts. The 9011 package dimensions is 65 smaller than the standard 9000 SIPs and incorporates the RI-70 switch rated at 3W.

9011, 9012 9117 Miniature SIP Relays

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