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S9012晶体管资料

  • S9012别名:S9012三极管、S9012晶体管、S9012晶体三极管

  • S9012生产厂家

  • S9012制作材料:Si-N/P

  • S9012性质:低频或音频放大 (LF)

  • S9012封装形式:直插封装

  • S9012极限工作电压:40V

  • S9012最大电流允许值:0.1A

  • S9012最大工作频率:<1MHZ或未知

  • S9012引脚数:3

  • S9012最大耗散功率:0.5W

  • S9012放大倍数

  • S9012图片代号:A-20

  • S9012vtest:40

  • S9012htest:999900

  • S9012atest:0.1

  • S9012wtest:0.5

  • S9012代换 S9012用什么型号代替

S9012价格

参考价格:¥0.0500

型号:S9012 品牌:CJ 备注:这里有S9012多少钱,2026年最近7天走势,今日出价,今日竞价,S9012批发/采购报价,S9012行情走势销售排行榜,S9012报价。
型号 功能描述 生产厂家 企业 LOGO 操作
S9012

PNP General Purpose Transistors

PNP General Purpose Transistors P/b Lead(Pb)-Free

WEITRON

S9012

丝印代码:2T1;PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA) ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

BILIN

银河微电

S9012

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Complementary to S9013 ● Excellent hFE linearity

DAYA

大亚电器

S9012

TO-92 Plastic-Encapsulate Transistors

TRANSOSTOR (PNP) FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: -0.5 A Collector-basevoltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to+150°C

ETCList of Unclassifed Manufacturers

未分类制造商

S9012

TRANSISTOR(PNP)

FEATURES • Complementary to S9013 • Excellent hFE linearity

HTSEMI

金誉半导体

S9012

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High Collector Current ● Complementary To S9013 ● Excellent hFE Linearity

JIANGSU

长电科技

S9012

PNP Silicon General Purpose Transistor

FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : - 0.5 A Collector-base voltage V(BR)CBO : - 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

SECOS

喜可士

S9012

丝印代码:2T1;TRANSISTOR (PNP)

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

SY

顺烨电子

S9012

PNP EPITAXIAL PLANAR TRANSISTOR

Description The S9012 is designed for use in 1W output amplifier of portable radiosin class B push-pull operation. Features • High total power dissipation. (PT:625mW) • High collector current. (IC:500mA) • Complementary to S9013 • Excellent linearity.

TGS

S9012

丝印代码:2T1;PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA) ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

LUGUANG

鲁光电子

S9012

PNP Silicon Epitaxial Planar Transistor

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the NPN transistor 9013

DGNJDZ

南晶电子

S9012

丝印代码:2T1;TRANSISTOR (PNP)

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

SHUNYE

顺烨电子

S9012

PNP Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= -500mA) ● Complementary To S9013. ● Excellent HFE Linearity. APPLICATIONS ● High Collector Current.

DSK

S9012

丝印代码:2T1;TRANSISTOR(PNP)

FEATURES Complementary to S9013 Excellent hFE linearity

GWSEMI

唯圣电子

S9012

丝印代码:2T1;PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

S9012

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to S9013

HOTTECH

合科泰

S9012

丝印代码:2T1;SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current Complementary To S9013 Excellent hFE Linearity

UMW

友台半导体

S9012

小信号三极管

JINGDAO

晶导

S9012

晶体管

JSCJ

长晶科技

S9012

小信号三极管

JIEJIE

捷捷微电

S9012

丝印代码:2T1;Plastic-Encapsulate Transistors

文件:682.52 Kbytes Page:2 Pages

SHENZHENSLS

三联盛

S9012

丝印代码:2T1;PNP General purpose Amplifier

文件:1.27924 Mbytes Page:5 Pages

JINGHENG

晶恒

S9012

丝印代码:2T1;TRANSISTOR (PNP)

文件:285.21 Kbytes Page:2 Pages

KOOCHIN

灏展电子

S9012

丝印代码:2T1;PNP Silicon Epitax ial Planar Transistor

文件:276.91 Kbytes Page:4 Pages

LEIDITECH

雷卯电子

S9012

TRANSISTOR(PNP)

文件:946.25 Kbytes Page:2 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

S9012

丝印代码:2T1;PNP Silicon Epitaxial Planar Transistor

文件:154.01 Kbytes Page:4 Pages

BILIN

银河微电

PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

MCC

PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

MCC

丝印代码:2T1;PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

PNP Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55°C to +150°C • Marking : S9012 • Lead Free Finish/RoHS Compliant (P Suffix d

MCC

丝印代码:2T1;PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

丝印代码:2T1;PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

SOT-23 Plastic-Encapsulate Transistors

SOT-23 Plastic-Encapsulate Transistors

ETCList of Unclassifed Manufacturers

未分类制造商

PNP General Purpose Transistors

PNP General Purpose Transistors

WEITRON

TRANSISTOR

DESCRIPTION PNP Epitaxial Silicon Transistor FEATURES Complementary to S9013M Excellent hFE linearity APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.)

JIANGSU

长电科技

PNP Transistors

Features ● Excellent hFE liearity ● Collector Current :IC=-0.5A

YFWDIODE

佑风微

PNP Epitaxial Silicon Transistor

FEATURE Power dissipation PCM : 0.625 W Tamb=25°C Collector current ICM: -0.5 A Collector-basevoltage V(BR)CBO: -40 V Operating and storage junction temperature range Tj,Tstg: -55°C to+150°C

SECOS

喜可士

丝印代码:2T1;SOT-323 Plastic-Encapsulate Transistors

FEATURES Complementary to S9013W Excellent hFE linearity

DGNJDZ

南晶电子

PNP Silicon Epitaxial Planar Transistor

文件:154.01 Kbytes Page:4 Pages

BILIN

银河微电

General Purpose Transistor

文件:239.43 Kbytes Page:1 Pages

SECOS

喜可士

PNP Silicon Transistors

文件:183.57 Kbytes Page:2 Pages

MCC

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS PNP 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS PNP 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

PNP EPITAXIAL SILICON TRANSISTOR

文件:336.14 Kbytes Page:4 Pages

BWTECH

SOT-23 Plastic-Encapsulate Transistors

文件:2.02363 Mbytes Page:4 Pages

HDSEMI

海德半导体

PNP Epitaxial Silicon Transistor

文件:95.56 Kbytes Page:2 Pages

SECOS

喜可士

TO-92 Plastic-Encapsulate Transistors

文件:2.23516 Mbytes Page:4 Pages

HDSEMI

海德半导体

SOT-323T Plastic-Encapsulate Transistors

文件:1.1333 Mbytes Page:4 Pages

JIANGSU

长电科技

High Speed 8-Bit TTL A/D Converter

GENERAL DESCRIPTION The AD9012 is an 8-bit, ultrahigh speed, analog-to-digital converter. The AD9012 is fabricated in an advanced bipolar process that allows operation at sampling rates up to 100 megasamples/second. Functionally, the AD9012 is comprised of 256 parallel comparator stages whose out

AD

亚德诺

High Speed 8-Bit TTL A/D Converter

GENERAL DESCRIPTION The AD9012 is an 8-bit, ultrahigh speed, analog-to-digital converter. The AD9012 is fabricated in an advanced bipolar process that allows operation at sampling rates up to 100 megasamples/second. Functionally, the AD9012 is comprised of 256 parallel comparator stages whose out

AD

亚德诺

20 VOICE SMART

General Description The MSu001 is a monolithic talking microcomputer that can memorize voice up to 22 seconds using MOSEL qualified coding method(MPCM). Its an integration of traditional 4-bit microcomputer and voice chip with minimal external components. LCD driver and miscellaneous interface ar

MOSEL

茂矽电子

PNP (1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION)

1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • High total power dissipation. (PT=625mW) • High Collector Current. (IC= -500mA) • Complementary to SS9013 • Excellent hFE linearity.

SAMSUNG

三星

5-Terminal, Low Dropout Voltage Dropper Type

文件:53.24 Kbytes Page:5 Pages

SANKEN

三垦

S9012产品属性

  • 类型

    描述

  • Polarity:

    PNP

  • PC_Max (mW):

    300

  • IC_Max (mA):

    500

  • V(BR)CBO_Min (V):

    40

  • V(BR)CEO_Min (V):

    25

  • V(BR)EBO (V):

    5

  • hFE_Min:

    120

  • hFE_Max:

    400

  • @ VCE (V):

    1

  • VCE(sat)_Max (V):

    0.6

  • @ IC (mA):

    500

  • @ IB (mA):

    50

  • fT_Min (MHz):

    150

更新时间:2026-5-13 19:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
YANGJIE/扬杰科技
25+
SOT-23
32000
YANGJIE/扬杰科技全新特价S9012-H-F2-0000HF即刻询购立享优惠#长期有货
GP
2550+
SOT23
8575
只做原装正品现货或订货假一赔十!
CJ/长电
21+
SOT-23
3000
实单价优-原装现货-系列订货-技术支持
CJ/长电
08+
SOT-23
10000
只售原装正品
UMW 友台
23+
SOT-23-3
21000
原装正品,实单请联系
21+
SMD
2863
十年信誉,只做原装,有挂就有现货!
RANGE
19+
SOT-23
33771
CJ长电
2016
SOT23
2405
全新原装 正品现货
CJ
24+
TO92
66500
只做原装进口现货
YANGJIE/扬杰科技
2025+
SOT-23
5000
原装进口,免费送样品!

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