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S9013晶体管资料
S9013别名:S9013三极管、S9013晶体管、S9013晶体三极管
S9013生产厂家:
S9013制作材料:Si-N/P
S9013性质:低频或音频放大 (LF)
S9013封装形式:直插封装
S9013极限工作电压:40V
S9013最大电流允许值:0.1A
S9013最大工作频率:<1MHZ或未知
S9013引脚数:3
S9013最大耗散功率:0.5W
S9013放大倍数:
S9013图片代号:A-20
S9013vtest:40
S9013htest:999900
- S9013atest:0.1
S9013wtest:0.5
S9013代换 S9013用什么型号代替:
S9013价格
参考价格:¥0.0600
型号:S9013 品牌:JXK 备注:这里有S9013多少钱,2025年最近7天走势,今日出价,今日竞价,S9013批发/采购报价,S9013行情走势销售排行榜,S9013报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
S9013 | 1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. 1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. •Hightotalpowerdissipation.(PT=625mW) •HighCollectorCurrent.(IC=500mA) •ComplementarytoSS9012 •ExcellenthFElinearity. | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
S9013 | PLASTICENCAPSULATETRANSISTORS [SHENZHENSLSTECHNOLOGYCO.,LTD.] Features: PCandICarelarger,hFElinearityisgood; Applications: Usedinpoweramplifiercircuit,complementarytoS9012. | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
S9013 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
S9013 | TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES ●ComplementarytoS9012 ●ExcellenthFElinearity | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | ||
S9013 | TO-92Plastic-EncapsulateTransistors FEATURE ComplementarytoS9012 ExcellenthFElinearity | DAYADaya Electric Group Co., Ltd. 大亚电器集团大亚电器集团有限公司 | ||
S9013 | NPNEPITAXIALPLANARTRANSISTOR Description TheS9013isdesignedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. Features •HighTotalPowerDissipation.(PT:625mW) •HighCollectorCurrent.(IC:500mA) •ComplementarytoS9012 •Excellentlinearity. | TGS Tiger Electronic Co.,Ltd | ||
S9013 | GeneralPurposeTransistor FEATURES Powerdissipation PCM:0.3W CollectorCurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operating&storagejunctiontemperature Tj,Tstg:-55°C~+150°C | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
S9013 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent. | DSK Diode Semiconductor Korea | ||
S9013 | NPNSILICONEPITAXIALPLANARTRANSISTOR Features •HighCollectorCurrent.(IC=500mA) •ComplementaryToS9012. •ExcellentHFELinearity. •Powerdissipation.(PC=300mW) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | ||
S9013 | SOT-23Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent. ●ComplementarytoS9012. ●ExcellenthFELinearity. | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | ||
S9013 | TRANSISTOR(NPN) FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳实业深圳市永而佳实业有限公司 | ||
S9013 | NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpoweroutput stages. Thetransistorissubdividedintothreegroups,G, HandI,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistor9012 | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | ||
S9013 | Plastic-EncapsulateTransistors Plastic-EncapsulateTransistors FEATURES ComplimentarytoS9012 | HOTTECHGuangdong Hottech Co. Ltd. 合科泰深圳市合科泰电子有限公司 | ||
S9013 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=500mA). ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW). APPLICATIONS ●HighCollectorCurrent. | LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司 | ||
S9013 | NPNTransistors Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | ||
S9013 | Powerdissipation FEATURE Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃ | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
S9013 | TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR Description Designedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. | DCCOM Dc Components | ||
S9013 | NPNSiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent. | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
S9013 | SOT-23Plastic-EncapsulateTransistors FEATURES HighCollectorCurrent. ComplementartyoS9012. ExcellenhtFELinearity. | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | ||
S9013 | TRANSISTOR(NPN) FEATURES ComplementarytoS9012 ExcellenthFElinearity | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | ||
S9013 | TRANSISTOR(NPN) FEATURES HighCollectorCurrent. ComplementartyoS9012. ExcellenhtFELinearity. | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | ||
S9013 | Plastic-EncapsulateTransistors 文件:661.49 Kbytes Page:4 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | ||
S9013 | GeneralPurposeTransistor 文件:349.4 Kbytes Page:1 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | ||
S9013 | NPNGeneralpurposeAmplifier 文件:1.28766 Mbytes Page:5 Pages | JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司 | ||
S9013 | NPNSiliconEpitaxialPlanarTransistor 文件:220 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | ||
S9013 | Plastic-EncapsulateTransistors 文件:650.57 Kbytes Page:2 Pages | SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD. 三联盛科技股份深圳市三联盛科技股份有限公司 | ||
S9013 | TRANSISTOR(NPN) 文件:245.93 Kbytes Page:2 Pages | KOOCHIN SHENZHEN KOO CHIN ELECTRONICS CO., LTD. | ||
S9013 | NPNSiliconTransistor 文件:87.63 Kbytes Page:3 Pages | AUK AUK corp | ||
NPNSiliconTransistors Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconTransistors Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconTransistors Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconTransistors Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNTransistors Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNSiliconTransistors Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconTransistors Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNSiliconTransistors Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNTransistors Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
NPNTransistors Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
TRANSISTOR(NPN) TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.3W(Tamb=25°C) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBOP40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
NPNGeneralPurposeTransistors NPNGeneralPurposeTransistors P/bLead(Pb)-Free | WEITRON Weitron Technology | |||
TRANSISTOR FEATURES HighCollectorCurrent.(IC=500mA) ComplementarytoS9012M ExcellenthFElinearity. APPLICATION 150mWOutputAmplifierofPotableRadiosinClassBPush-pullOperation. Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
Plastic-EncapsulateTransistors FEATURES ComplementarytoS9012 ExcellenthFElinearity | GWSEMIGoodwork Semiconductor Co., Ltd 唯圣电子唯圣电子有限公司 | |||
NPNEpitaxialSiliconTransistor FEATURE Powerdissipation PCM:0.625WTamb=25°C Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55to+150°C | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent. | DSK Diode Semiconductor Korea | |||
TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity | HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd. 金誉半导体深圳市金誉半导体股份有限公司 | |||
0.5A,40VNPNPlasticEncapsulatedTransistor FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent. | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
SOT-323Plastic-EncapsulateTransistors FEATURES HighCollectorCurrent ExcellentHFELinearity | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
SOT-323Plastic-EncapsulateTransistors TRANSISTOR(NPN) Features ●HighCollectorCurrent ●ExcellentHFELinearity | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | |||
NPNSiliconEpitaxialPlanarTransistor 文件:220 Kbytes Page:4 Pages | BILINGalaxy Semi-Conductor Holdings Limited 银河微电常州银河世纪微电子股份有限公司 | |||
GeneralPurposeTransistor 文件:349.4 Kbytes Page:1 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNSiliconTransistors 文件:181.88 Kbytes Page:2 Pages | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS NPN 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
NPNTransistors 文件:1.85901 Mbytes Page:3 Pages | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | |||
SOT-23Plastic-EncapsulateTransistors 文件:2.077659 Mbytes Page:4 Pages | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | |||
NPNEpitaxialSiliconTransistor 文件:101.62 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
Plastic-EncapsulateTransistors 文件:661.49 Kbytes Page:4 Pages | LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司 | |||
TO-92Plastic-EncapsulateTransistors 文件:2.48587 Mbytes Page:4 Pages | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 |
S9013产品属性
- 类型
描述
- 型号
S9013
- 功能描述
TO-92 Plastic-Encapsulate Transistors(HAROM ELECTRONIC)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CJ |
23+ |
SOT-23 |
150000 |
原装正品!假一罚十! |
|||
CJ(江苏长电/长晶) |
24+ |
N/A |
97048 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
21+ |
TO-92 |
8080 |
只做原装,质量保证 |
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CJ/长电 |
24+ |
SOT-23 |
2000 |
只做原厂渠道 可追溯货源 |
|||
CJ |
SOT-23TO-92 |
1000 |
正品原装--自家现货-实单可谈 |
||||
CJ/长电 |
22+ |
2019 |
459000 |
原装正品现货,可开13点税 |
|||
CJ/长电 |
2410+ |
SOT-23 |
50000 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
长电 |
24+ |
SOT23 |
960000 |
郑重承诺只做原装进口现货 |
|||
24+ |
100 |
真实现货库存 |
|||||
CJ(江苏长电/长晶) |
NA |
4861 |
全新原装正品现货可开票 |
S9013规格书下载地址
S9013参数引脚图相关
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- soc
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- s9014
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- S9012-H
- S9012-G
- S9012
- S9011
- S9010
- S8XXXB
- S8xC-13
- S8X8TS2
- S8X8TS1
- S8X8TS
- S8X8ES2
- S8X8ES1
- S8X8ES
- S8VS_13
- S879T
- S876T
- S791T
- S790T
- S779T
- S763T
- S7503
- S7502
- S7310N
- S7310M
- S7310E
- S7310D
- S7310C
- S7310B
- S730T
- S691T
- S690T
S9013数据表相关新闻
S9014 TO92
常用小功率三极管包(TO-92)S9013S9014S8050S8550现货热卖元器件一站式配单
2021-12-30S9012 CJ/长电 SOT-23 支持原装长电订货型号,欢迎咨询!
S9012CJ/长电SOT-23
2021-5-17S9013 SOT-23 CJ/长电 NPN三极管 原装正品
原装正品现货供应0755-28892389/13713856319;QQ:2639752116;微信:13713856319;
2021-3-29S9012,SSF10N90A,SSF17N60A,SSF22N50A,SSF25N40A,SSF45N20A
S9012,SSF10N90A,SSF17N60A,SSF22N50A,SSF25N40A,SSF45N20A
2020-3-12S9013M
S9013M
2019-12-27S8VK-WA开关电源S8VK-WA24024
欧姆龙的S8VK-WA采用独特的三相200V电源,可减少设计复杂性并提高可靠性
2019-9-19
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