S9013晶体管资料

  • S9013别名:S9013三极管、S9013晶体管、S9013晶体三极管

  • S9013生产厂家

  • S9013制作材料:Si-N/P

  • S9013性质:低频或音频放大 (LF)

  • S9013封装形式:直插封装

  • S9013极限工作电压:40V

  • S9013最大电流允许值:0.1A

  • S9013最大工作频率:<1MHZ或未知

  • S9013引脚数:3

  • S9013最大耗散功率:0.5W

  • S9013放大倍数

  • S9013图片代号:A-20

  • S9013vtest:40

  • S9013htest:999900

  • S9013atest:0.1

  • S9013wtest:0.5

  • S9013代换 S9013用什么型号代替

S9013价格

参考价格:¥0.0600

型号:S9013 品牌:JXK 备注:这里有S9013多少钱,2025年最近7天走势,今日出价,今日竞价,S9013批发/采购报价,S9013行情走势销售排行榜,S9013报价。
型号 功能描述 生产厂家 企业 LOGO 操作
S9013

1W Output Amplifier of Potable Radios in Class B Push-pull Operation.

1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • High total power dissipation. (PT=625mW) • High Collector Current. (IC=500mA) • Complementary to SS9012 • Excellent hFE linearity.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

S9013

PLASTIC ENCAPSULATE TRANSISTORS

[SHENZHEN SLS TECHNOLOGY CO.,LTD.] Features: PC and IC are larger, hFE linearity is good; Applications: Used in power amplifier circuit, complementary to S9012.

ETCList of Unclassifed Manufacturers

未分类制造商

S9013

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA) ● Complementary To S9012. ● Excellent HFELinearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

BILIN

银河微电

S9013

TRANSISTOR(NPN)

TRANSISTOR (NPN) FEATURES ● Complementary to S9012 ● Excellent hFE linearity

HTSEMI

金誉半导体

S9013

TO-92 Plastic-Encapsulate Transistors

FEATURE Complementary to S9012 Excellent hFE linearity

DAYA

大亚电器

S9013

NPN EPITAXIAL PLANAR TRANSISTOR

Description The S9013 is designed for use in 1W output amplifier of portable radios in class B push-pull operation. Features •High Total Power Dissipation. (PT:625mW) •High Collector Current. (IC:500mA) • Complementary to S9012 • Excellent linearity.

TGS

S9013

General Purpose Transistor

FEATURES Power dissipation PCM : 0.3 W Collector Current ICM : 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating & storage junction temperature Tj, Tstg : - 55°C ~ + 150°C

SECOS

喜可士

S9013

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA) ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

DSK

S9013

NPN SILICON EPITAXIAL PLANAR TRANSISTOR

Features • High Collector Current.(IC= 500mA) • Complementary To S9012. • Excellent HFE Linearity. • Power dissipation.(PC=300mW)

SUNMATE

森美特

S9013

SOT-23 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Collector Current. ● Complementary to S9012. ● Excellent hFE Linearity.

JIANGSU

长电科技

S9013

TRANSISTOR (NPN)

FEATURE Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

WINNERJOIN

永而佳

S9013

NPN Silicon Epitaxial Planar Transistor

NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into three groups, G, H and I, according to its DC current gain. As complementary type the PNP transistor 9012

DGNJDZ

南晶电子

S9013

Plastic-Encapsulate Transistors

Plastic-Encapsulate Transistors FEATURES Complimentary to S9012

HOTTECH

合科泰

S9013

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA). ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW). APPLICATIONS ● High Collector Current.

LUGUANG

鲁光电子

S9013

NPN Transistors

Features ● Excellent hFE linearity ● Collector Current :IC=0.5A

YFWDIODE

佑风微

S9013

Power dissipation

FEATURE Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range Tj, Tstg: -55℃ to +150℃

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

S9013

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for use in 1W output amplifier of portable radios in class B push-pull operation.

DCCOM

道全

S9013

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA) ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PC=300mW) APPLICATIONS ● High Collector Current.

LEIDITECH

雷卯电子

S9013

SOT-23 Plastic-Encapsulate Transistors

FEATURES High Collector Current. Complementartyo S9012. ExcellenhtF E Linearity.

UMW

友台半导体

S9013

TRANSISTOR(NPN)

FEATURES Complementary to S9012 Excellent hFE linearity

GWSEMI

唯圣电子

S9013

TRANSISTOR (NPN)

FEATURES High Collector Current. Complementartyo S9012. ExcellenhtF E Linearity.

SY

顺烨电子

S9013

小信号三极管

JINGDAO

晶导

S9013

晶体管

JSCJ

长晶科技

S9013

小信号三极管

JIEJIEJIEJIE MICROELECTRONICS CO.,Ltd

捷捷微电江苏捷捷微电子股份有限公司

S9013

Plastic-Encapsulate Transistors

文件:661.49 Kbytes Page:4 Pages

LEIDITECH

雷卯电子

S9013

General Purpose Transistor

文件:349.4 Kbytes Page:1 Pages

SECOS

喜可士

S9013

NPN General purpose Amplifier

文件:1.28766 Mbytes Page:5 Pages

JINGHENG

晶恒

S9013

NPN Silicon Epitaxial Planar Transistor

文件:220 Kbytes Page:4 Pages

BILIN

银河微电

S9013

Plastic-Encapsulate Transistors

文件:650.57 Kbytes Page:2 Pages

SHENZHENSLS

三联盛

S9013

TRANSISTOR (NPN)

文件:245.93 Kbytes Page:2 Pages

KOOCHIN

灏展电子

S9013

NPN Silicon Transistor

文件:87.63 Kbytes Page:3 Pages

AUK

NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Marking Code: S9013 • Lead Free Finish/RoHS Compliant (P Suffix

MCC

NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Marking Code: S9013 • Lead Free Finish/RoHS Compliant (P Suffix

MCC

NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Marking Code: S9013 • Lead Free Finish/RoHS Compliant (P Suffix

MCC

NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Marking Code: S9013 • Lead Free Finish/RoHS Compliant (P Suffix

MCC

NPN Transistors

Features ● Excellent hFE linearity ● Collector Current :IC=0.5A

YFWDIODE

佑风微

NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Marking Code: S9013 • Lead Free Finish/RoHS Compliant (P Suffix

MCC

NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Marking Code: S9013 • Lead Free Finish/RoHS Compliant (P Suffix

MCC

NPN Silicon Transistors

Features • TO-92 Plastic-Encapsulate Transistors • Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. • Collector-current 0.5A • Collector-base Voltage 40V • Operating and storage junction temperature range: -55℃ to +150℃ • Marking Code: S9013 • Lead Free Finish/RoHS Compliant (P Suffix

MCC

NPN Transistors

Features ● Excellent hFE linearity ● Collector Current :IC=0.5A

YFWDIODE

佑风微

NPN Transistors

Features ● Excellent hFE linearity ● Collector Current :IC=0.5A

YFWDIODE

佑风微

TRANSISTOR (NPN)

TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.3 W (Tamb=25°C) Collector current ICM: 0.5 A Collector-base voltage V(BR)CBOP 40 V Operating and storage junction temperature range TJ, Tstg: -55°C to +150°C

ETCList of Unclassifed Manufacturers

未分类制造商

NPN General Purpose Transistors

NPN General Purpose Transistors P/b Lead(Pb)-Free

WEITRON

TRANSISTOR

FEATURES High Collector Current. (IC=500mA) Complementary to S9012M Excellent hFElinearity. APPLICATION 150mW Output Amplifier of Potable Radios in Class B Push-pull Operation. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM,Note book PC, etc.)

JIANGSU

长电科技

Plastic-Encapsulate Transistors

FEATURES Complementary to S9012 Excellent hFE linearity

GWSEMI

唯圣电子

NPN Epitaxial Silicon Transistor

FEATURE Power dissipation PCM : 0.625 W Tamb=25 °C Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range Tj, Tstg: -55 to +150 °C

SECOS

喜可士

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR (NPN) FEATURES ● High Collector Current ● Excellent HFE Linearity

JIANGSU

长电科技

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA) ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PT=200mW) APPLICATIONS ● High Collector Current.

DSK

TRANSISTOR(NPN)

FEATURES ● High Collector Current ● Excellent HFE Linearity

HTSEMI

金誉半导体

0.5A , 40V NPN Plastic Encapsulated Transistor

FEATURES ● High Collector Current ● Excellent HFE Linearity

SECOS

喜可士

NPN Silicon Epitaxial Planar Transistor

FEATURES ● High Collector Current.(IC= 500mA) ● Complementary To S9012. ● Excellent HFE Linearity. ● Power dissipation.(PT=200mW) APPLICATIONS ● High Collector Current.

BILIN

银河微电

SOT-323 Plastic-Encapsulate Transistors

FEATURES High Collector Current Excellent HFE Linearity

DGNJDZ

南晶电子

SOT-323 Plastic-Encapsulate Transistors

TRANSISTOR( NPN ) Features ● High Collector Current ● Excellent HFE Linearity

HDSEMI

海德半导体

NPN Silicon Epitaxial Planar Transistor

文件:220 Kbytes Page:4 Pages

BILIN

银河微电

General Purpose Transistor

文件:349.4 Kbytes Page:1 Pages

SECOS

喜可士

NPN Silicon Transistors

文件:181.88 Kbytes Page:2 Pages

MCC

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS NPN 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCC

NPN Transistors

文件:1.85901 Mbytes Page:3 Pages

YFWDIODE

佑风微

SOT-23 Plastic-Encapsulate Transistors

文件:2.077659 Mbytes Page:4 Pages

HDSEMI

海德半导体

S9013产品属性

  • 类型

    描述

  • 型号

    S9013

  • 功能描述

    TO-92 Plastic-Encapsulate Transistors(HAROM ELECTRONIC)

更新时间:2025-9-29 19:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
国产
24+/25+
TO92
950
原装正品现货库存价优
UMW(广东友台半导体)
24+
SOT-23-3
5000
诚信服务,绝对原装原盘。
TWGMC臺灣迪嘉
25+
SOT23
36000
TWGMC臺灣迪嘉原装现货S9013即刻询购立享优惠#长期有排单订
BORN(伯恩半导体)
24+
SOT-23
50000
品牌代理,价格优势,技术支持!!
国产
25+
sot23
8000
深圳现货,原装正品
KEC
12+
T0-92
100
原装现货价格有优势量多可发货
SOT-23
23+
NA
15659
振宏微专业只做正品,假一罚百!
鲁光电子
21+
SOT-23
100
全新原装鄙视假货
长电原装正品专卖价格
NEW
SOT-23
21210
全新原装正品,价格优势,长期供应,量大可订
CJ/长电
21+
SOT-23
30000
百域芯优势 实单必成 可开13点增值税

S9013数据表相关新闻