S9013晶体管资料

  • S9013别名:S9013三极管、S9013晶体管、S9013晶体三极管

  • S9013生产厂家

  • S9013制作材料:Si-N/P

  • S9013性质:低频或音频放大 (LF)

  • S9013封装形式:直插封装

  • S9013极限工作电压:40V

  • S9013最大电流允许值:0.1A

  • S9013最大工作频率:<1MHZ或未知

  • S9013引脚数:3

  • S9013最大耗散功率:0.5W

  • S9013放大倍数

  • S9013图片代号:A-20

  • S9013vtest:40

  • S9013htest:999900

  • S9013atest:0.1

  • S9013wtest:0.5

  • S9013代换 S9013用什么型号代替

S9013价格

参考价格:¥0.0600

型号:S9013 品牌:JXK 备注:这里有S9013多少钱,2025年最近7天走势,今日出价,今日竞价,S9013批发/采购报价,S9013行情走势销售排行榜,S9013报价。
型号 功能描述 生产厂家&企业 LOGO 操作
S9013

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. •Hightotalpowerdissipation.(PT=625mW) •HighCollectorCurrent.(IC=500mA) •ComplementarytoSS9012 •ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
S9013

PLASTICENCAPSULATETRANSISTORS

[SHENZHENSLSTECHNOLOGYCO.,LTD.] Features: PCandICarelarger,hFElinearityisgood; Applications: Usedinpoweramplifiercircuit,complementarytoS9012.

ETCList of Unclassifed Manufacturers

未分类制造商

ETC
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
S9013

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●ComplementarytoS9012 ●ExcellenthFElinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI
S9013

TO-92Plastic-EncapsulateTransistors

FEATURE ComplementarytoS9012 ExcellenthFElinearity

DAYADaya Electric Group Co., Ltd.

大亚电器集团大亚电器集团有限公司

DAYA
S9013

NPNEPITAXIALPLANARTRANSISTOR

Description TheS9013isdesignedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. Features •HighTotalPowerDissipation.(PT:625mW) •HighCollectorCurrent.(IC:500mA) •ComplementarytoS9012 •Excellentlinearity.

TGS

Tiger Electronic Co.,Ltd

TGS
S9013

GeneralPurposeTransistor

FEATURES Powerdissipation PCM:0.3W CollectorCurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operating&storagejunctiontemperature Tj,Tstg:-55°C~+150°C

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

DSK
S9013

NPNSILICONEPITAXIALPLANARTRANSISTOR

Features •HighCollectorCurrent.(IC=500mA) •ComplementaryToS9012. •ExcellentHFELinearity. •Powerdissipation.(PC=300mW)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SUNMATE
S9013

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent. ●ComplementarytoS9012. ●ExcellenthFELinearity.

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU
S9013

TRANSISTOR(NPN)

FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳实业深圳市永而佳实业有限公司

WINNERJOIN
S9013

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpoweroutput stages. Thetransistorissubdividedintothreegroups,G, HandI,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistor9012

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ
S9013

Plastic-EncapsulateTransistors

Plastic-EncapsulateTransistors FEATURES ComplimentarytoS9012

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰电子有限公司

HOTTECH
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA). ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW). APPLICATIONS ●HighCollectorCurrent.

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

LUGUANG
S9013

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE
S9013

Powerdissipation

FEATURE Powerdissipation PCM:0.3W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

SKTECHNOLGY
S9013

TECHNICALSPECIFICATIONSOFPNPEPITAXIALPLANARTRANSISTOR

Description Designedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation.

DCCOM

Dc Components

DCCOM
S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
S9013

SOT-23Plastic-EncapsulateTransistors

FEATURES HighCollectorCurrent. ComplementartyoS9012. ExcellenhtFELinearity.

UMWGuangdong Youtai Semiconductor Co., Ltd.

友台半导体广东友台半导体有限公司

UMW
S9013

TRANSISTOR(NPN)

FEATURES ComplementarytoS9012 ExcellenthFElinearity

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI
S9013

TRANSISTOR(NPN)

FEATURES HighCollectorCurrent. ComplementartyoS9012. ExcellenhtFELinearity.

SYChangzhou Shunye Electronics Co.,Ltd.

顺烨电子江苏顺烨电子有限公司

SY
S9013

Plastic-EncapsulateTransistors

文件:661.49 Kbytes Page:4 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH
S9013

GeneralPurposeTransistor

文件:349.4 Kbytes Page:1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS
S9013

NPNGeneralpurposeAmplifier

文件:1.28766 Mbytes Page:5 Pages

JINGHENGJinan Jing Heng Electronics Co., Ltd.

晶恒济南晶恒电子有限责任公司

JINGHENG
S9013

NPNSiliconEpitaxialPlanarTransistor

文件:220 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN
S9013

Plastic-EncapsulateTransistors

文件:650.57 Kbytes Page:2 Pages

SHENZHENSLSSHENZHEN SLS TECHNOLOGY CO.,LTD.

三联盛科技股份深圳市三联盛科技股份有限公司

SHENZHENSLS
S9013

TRANSISTOR(NPN)

文件:245.93 Kbytes Page:2 Pages

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

KOOCHIN
S9013

NPNSiliconTransistor

文件:87.63 Kbytes Page:3 Pages

AUK

AUK corp

AUK

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNSiliconTransistors

Features •TO-92Plastic-EncapsulateTransistors •Capableof0.625Watts(Tamb=25OC)ofPowerDissipation. •Collector-current0.5A •Collector-baseVoltage40V •Operatingandstoragejunctiontemperaturerange:-55℃to+150℃ •MarkingCode:S9013 •LeadFreeFinish/RoHSCompliant(PSuffix

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

NPNTransistors

Features ●ExcellenthFElinearity ●CollectorCurrent:IC=0.5A

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES Powerdissipation PCM:0.3W(Tamb=25°C) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBOP40V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55°Cto+150°C

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

NPNGeneralPurposeTransistors

NPNGeneralPurposeTransistors P/bLead(Pb)-Free

WEITRON

Weitron Technology

WEITRON

TRANSISTOR

FEATURES HighCollectorCurrent.(IC=500mA) ComplementarytoS9012M ExcellenthFElinearity. APPLICATION 150mWOutputAmplifierofPotableRadiosinClassBPush-pullOperation. Forportableequipment:(i.e.Mobilephone,MP3,MD,CD-ROM,DVD-ROM,NotebookPC,etc.)

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

Plastic-EncapsulateTransistors

FEATURES ComplementarytoS9012 ExcellenthFElinearity

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣电子唯圣电子有限公司

GWSEMI

NPNEpitaxialSiliconTransistor

FEATURE Powerdissipation PCM:0.625WTamb=25°C Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55to+150°C

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

长电科技江苏长电科技股份有限公司

JIANGSU

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

DSK

TRANSISTOR(NPN)

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金誉半导体深圳市金誉半导体股份有限公司

HTSEMI

0.5A,40VNPNPlasticEncapsulatedTransistor

FEATURES ●HighCollectorCurrent ●ExcellentHFELinearity

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA) ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PT=200mW) APPLICATIONS ●HighCollectorCurrent.

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

SOT-323Plastic-EncapsulateTransistors

FEATURES HighCollectorCurrent ExcellentHFELinearity

DGNJDZNanjing International Group Co

南晶电子东莞市南晶电子有限公司

DGNJDZ

SOT-323Plastic-EncapsulateTransistors

TRANSISTOR(NPN) Features ●HighCollectorCurrent ●ExcellentHFELinearity

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

NPNSiliconEpitaxialPlanarTransistor

文件:220 Kbytes Page:4 Pages

BILINGalaxy Semi-Conductor Holdings Limited

银河微电常州银河世纪微电子股份有限公司

BILIN

GeneralPurposeTransistor

文件:349.4 Kbytes Page:1 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

NPNSiliconTransistors

文件:181.88 Kbytes Page:2 Pages

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3 标准主体(!--TO-226AA) 包装:散装 描述:TRANS NPN 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

封装/外壳:TO-226-3,TO-92-3(TO-226AA)成形引线 包装:带盒(TB) 描述:TRANS NPN 25V 0.5A TO92 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个

MCCMicro Commercial Components

美微科美微科半导体股份有限公司

MCC

NPNTransistors

文件:1.85901 Mbytes Page:3 Pages

YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD

佑风微电子广东佑风微电子有限公司

YFWDIODE

SOT-23Plastic-EncapsulateTransistors

文件:2.077659 Mbytes Page:4 Pages

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

NPNEpitaxialSiliconTransistor

文件:101.62 Kbytes Page:2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SECOS

Plastic-EncapsulateTransistors

文件:661.49 Kbytes Page:4 Pages

LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd

雷卯电子上海雷卯电子科技有限公司

LEIDITECH

TO-92Plastic-EncapsulateTransistors

文件:2.48587 Mbytes Page:4 Pages

HDSEMIJiangsu High diode Semiconductor Co., Ltd

苏海德半导体苏海德半导体有限公司

HDSEMI

S9013产品属性

  • 类型

    描述

  • 型号

    S9013

  • 功能描述

    TO-92 Plastic-Encapsulate Transistors(HAROM ELECTRONIC)

更新时间:2025-5-1 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CJ
23+
SOT-23
150000
原装正品!假一罚十!
CJ(江苏长电/长晶)
24+
N/A
97048
原厂可订货,技术支持,直接渠道。可签保供合同
21+
TO-92
8080
只做原装,质量保证
CJ/长电
24+
SOT-23
2000
只做原厂渠道 可追溯货源
CJ
SOT-23TO-92
1000
正品原装--自家现货-实单可谈
CJ/长电
22+
2019
459000
原装正品现货,可开13点税
CJ/长电
2410+
SOT-23
50000
原装正品.假一赔百.正规渠道.原厂追溯.
长电
24+
SOT23
960000
郑重承诺只做原装进口现货
24+
100
真实现货库存
CJ(江苏长电/长晶)
NA
4861
全新原装正品现货可开票

S9013芯片相关品牌

  • ARIES
  • Bourns
  • FERROXCUBE
  • Fuji
  • KOA
  • MEANWELL
  • PREDIP
  • RFE
  • SMC
  • TRUMPOWER
  • WPI
  • YANGJIE

S9013数据表相关新闻