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S6045

Low temperature coefficient type APD for 800 nm band

文件:235.36 Kbytes Page:4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

适用于800nm波段 低温度系数类型

\n- 低温度系数: 0.4 V/℃\n- 高速响应\n- 高灵敏度\n- 低噪声;

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

适用于800nm波段 低温度系数类型

\n- 低温度系数: 0.4 V/℃\n- 高速响应\n- 高灵敏度\n- 低噪声;

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

适用于800nm波段 低温度系数类型

\n- 低温度系数: 0.4 V/℃\n- 高速响应\n- 高灵敏度\n- 低噪声;

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

鵝롦릇佯╊퓗?겹궭?ㅳ깤??800 nm躍?뵪APD

文件:333.68 Kbytes Page:5 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Low temperature coefficient type APD for 800 nm band

文件:235.36 Kbytes Page:4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Low temperature coefficient type APD for 800 nm band

文件:235.36 Kbytes Page:4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Low temperature coefficient type APD for 800 nm band

文件:235.36 Kbytes Page:4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Low temperature coefficient type APD for 800 nm band

文件:235.36 Kbytes Page:4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Low temperature coefficient type APD for 800 nm band

文件:235.36 Kbytes Page:4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

Low temperature coefficient type APD for 800 nm band

文件:235.36 Kbytes Page:4 Pages

HAMAMATSUHamamatsu Photonics Co.,Ltd.

滨松光子滨松光子学株式会社

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Rating • 45 Volt Blocking Voltage

MOTOROLA

摩托罗拉

SWITCHMODE??Power Rectifier

SWITCHMODE™ Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: • Dual Diode Construction — Terminals 1 and 3 May Be Connected for Parallel Operation at Full Ratin

MOTOROLA

摩托罗拉

Industrial Silicon Rectifier, 60A

Features: • Low Leakage Current • Good Surge Capability up to 1000A • Availavle in Standard and Reverse Polarity

NTE

S6045产品属性

  • 类型

    描述

  • 感光面积:

    φ1.5 mm

  • 封装:

    金属

  • 封装类型:

    TO-5

  • 峰值波长(典型值):

    800 nm

  • 光谱响应范围(最小值):

    400 to 1000 nm

  • 灵敏度(典型值):

    0.5 A/W

  • 暗电流(最大值):

    5 nA

  • 截止频率(典型值):

    350 MHz

  • 结电容(典型值):

    12 pF

  • 击穿电压(典型值):

    200 V

  • 击穿电压温度系数(典型值):

    0.4 V/℃

  • 增益(典型值):

    100

  • 测试条件:

    Ta=25 ℃,除非特别说明,均为典型值,灵敏度

更新时间:2026-5-21 16:25:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
原厂原装
ROHS
13352
一级代理 原装正品假一罚十价格优势长期供货
HAMAMATSU
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
达高TECCOR
23+
TO-220
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
PHI
23+24
BGA
9860
原厂原包装。终端BOM表可配单。可开13%增值税

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