650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

封装/外壳：TO-247-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：DIODE SCHOTTKY SILICON CARBIDE S 分立半导体产品 二极管 - 整流器 - 阵列

650V SIC POWER SCHOTTKY RECTIFIERS

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage “-A” is an AEC-Q101 qualified device Terminals finish: 100% Pure Tin Pb − Free Device All

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

Silicon Carbide Schottky Diode

General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi