Discrete SiC Schottky Diodes

650V SIC POWER SCHOTTKY RECTIFIER

175°C TJ operation Ultra-low switching loss Switching speeds independent of operating temperature Low total conduction losses High forward surge current capability High package isolation voltage Terminals finish: 100% Pure Tin “-A” is an AEC-Q101 qualified device Pb − Free Device All

SiC Schottky Diode

Features Low leakage current (IR) Zero reverse recovery current Temperature independent switching behavior Positive temperature coefficient on VF High surge current capacity Low capacitive charge Applications Switch mode power supplies (SMPS) Uninterruptible power supplies Server/telec

Silicon Carbide Schottky Diode

Features • Zero Forward/Reverse Recovery Current • High Blocking Voltage • High Frequency Operation • Positive Temperature Coefficient on VF • Temperature Independent Switching Behavior • 100% avalanche tested Benefits• Higher System Efficiency• Parallel Device Convenience withouttherma

Silicon Carbide Schottky Diode

General Description This product family offers state of the art performance. It is designed for high frequency applications here high efficiency and high reliability are required. Features  Zero Forward/Reverse Recovery Current  High Blocking Voltage  High Frequency Operation  Positi

Silicon Carbide Schottky Diode

Features  Low Forward Voltage Drop  High-Speed Switching  Positive Temperature Coefficient  Temperature-Independent Switching Behavior Applications  Power Factor Correction  Sever Mode Power Supplies  Uninterruptible Power Supply