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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
S2M0160120D | 1200VSICPOWERMOSFET Positivetemperaturecharacteristics,easytoparallel. Lowon-resistanceTyp.RDS(on)=175mΩ. Fastswitchingspeedandlowswitchinglosses. Veryfastandrobustintrinsicbodydiode. Processofnon-brightTinelectroplatin | SMCDIODESMC Diode Solutions Co. LTD 桑德斯微电子桑德斯微电子器件（南京）有限公司 |  |   |
1200VSICPOWERMOSFET •Positivetemperaturecharacteristics,easytoparallel. •Lowon-resistanceTyp.RDS(on)=175mΩ. •Fastswitchingspeedandlowswitchinglosses. •Veryfastandrobustintrinsicbodydiode. •Processofnon-brightTinelectroplatin | SMCDIODESMC Diode Solutions Co. LTD 桑德斯微电子桑德斯微电子器件（南京）有限公司 | | | |
1200VSICPOWERMOSFET •Positivetemperaturecharacteristics,easytoparallel. •Lowon-resistanceTyp.RDS(on)=175mΩ. •Fastswitchingspeedandlowswitchinglosses. •Veryfastandrobustintrinsicbodydiode. •Processofnon-brightTinelectroplatin | SMCDIODESMC Diode Solutions Co. LTD 桑德斯微电子桑德斯微电子器件（南京）有限公司 | | | |
N-ChannelEnhancementMode SiliconCarbidePowerMOSFETZ-FET™MOSFET N-ChannelEnhancementMode Features •HighSpeedSwitchingwithLowCapacitances •HighBlockingVoltagewithLowRDS(on) •EasytoParallelandSimpletoDrive •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefts •HigherSystem | CreeCree, Inc 科锐 |  | | |
SiliconCarbidePowerMOSFETC2MTMMOSFETTechnologyN-ChannelEnhancementMode Features •HighBlockingVoltagewithLowOn-Resistance •HighSpeedSwitchingwithLowCapacitances •EasytoParallelandSimpletoDrive •AvalancheRuggedness •ResistanttoLatch-Up •HalogenFree,RoHSCompliant Benefits •HigherSystemEfficiency •ReducedCoolingRequirements •I | WOLFSPEED WOLFSPEED, INC. |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SAMTEC/申泰 |
23+ |
2021 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
24+ |
N/A |
70000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
JST/日压 |
22+ |
连接器 |
728922 |
代理-优势-原装-正品-现货*期货 |
|||
Samtec |
24+ |
连接器 |
1070 |
进口原装正品优势供应 |
|||
SAMTEC |
24+ |
con |
35960 |
查现货到京北通宇商城 |
|||
SAMTEC |
20+ |
连接器 |
2963 |
就找我吧!--邀您体验愉快问购元件! |
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S2M0160120D规格书下载地址
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DdatasheetPDF页码索引
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