位置：首页 > IC中文资料第2911页 > C2M0160120D
C2M0160120D价格
参考价格：￥52.9266
型号：C2M0160120D 品牌：Cree 备注：这里有C2M0160120D多少钱，2025年最近7天走势，今日出价，今日竞价，C2M0160120D批发/采购报价，C2M0160120D行情走势销售排行榜，C2M0160120D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
C2M0160120D | N-Channel Enhancement Mode Silicon Carbide Power MOSFET Z-FET™ MOSFET N-Channel Enhancement Mode Features • High Speed Switching with Low Capacitances • High Blocking Voltage with Low RDS(on) • Easy to Parallel and Simple to Drive • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefts • Higher System | Cree 科锐 |   | |
C2M0160120D | Silicon Carbide Power MOSFET C2M TM MOSFET Technology N-Channel Enhancement Mode Features • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Avalanche Ruggedness • Resistant to Latch-Up • Halogen Free, RoHS Compliant Benefits • Higher System Efficiency • Reduced Cooling Requirements • I | WOLFSPEED | | |
C2M0160120D | SiC MOS | chipnobo 无边界 | | |
C2M0160120D | 碳化硅 MOSFET | ETC 知名厂家 | ETC | |
C2M0160120D | 1200 V Discrete Silicon Carbide MOSFETs | WOLFSPEED | | |
Silicon Carbide Power MOSFET 文件：1.10528 Mbytes Page：10 Pages | Cree 科锐 | | ||
1200V SIC POWER MOSFET Positive temperature characteristics, easy to parallel. Low on-resistance Typ. RDS(on) = 175mΩ . Fast switching speed and low switching losses. Very fast and robust intrinsic body diode. Process of non-bright Tin electroplatin | SMCDIODE 桑德斯微电子 | | ||
1200V SIC POWER MOSFET • Positive temperature characteristics, easy to parallel. • Low on-resistance Typ. RDS(on) = 175mΩ . • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode. • Process of non-bright Tin electroplatin | SMCDIODE 桑德斯微电子 | | ||
1200V SIC POWER MOSFET • Positive temperature characteristics, easy to parallel. • Low on-resistance Typ. RDS(on) = 175mΩ . • Fast switching speed and low switching losses. • Very fast and robust intrinsic body diode. • Process of non-bright Tin electroplatin | SMCDIODE 桑德斯微电子 | |
C2M0160120D产品属性
- 类型
描述
- 型号
C2M0160120D
- 制造商
Cree
- 制造商
Cree
- 功能描述
SIC MOSFET N-CH 1.2KV 17.7A
- 制造商
Cree
- 功能描述
SIC MOSFET, N-CH, 1.2KV, 17.7A, TO-247-3
- 制造商
Cree
- 功能描述
SILICON CARBIDE POWER TRANSISTORS/MODULES
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
WOLFSPEED |
24+ |
TO-247 |
10000 |
||||
Wolfspeed |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
CREE |
25+ |
30000 |
原装现货,支持实单 |
||||
CREE |
23+ |
TO3P |
50000 |
全新原装正品现货,支持订货 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
CREE/科锐 |
25+ |
TO-247 |
3484 |
原装正品,假一罚十! |
|||
CYPRESS/赛普拉斯 |
24+ |
SOP-20L |
18766 |
公司现货库存,支持实单 |
|||
Wolfspeed, Inc. |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
CREE(科锐) |
24+ |
N/A |
17481 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
C2M0160120D规格书下载地址
C2M0160120D参数引脚图相关
- cbb电容
- cbb60
- capsense
- can总线
- ca851
- ca3410
- ca158
- ca1558
- ca1458
- ca139
- ca121
- c960
- c903
- c9012
- c901
- C80
- c62f
- c430p
- c3055
- C-3001E
- C-3001
- c3000
- C3/120
- C-2YCX
- C-2XCX
- C-2R7-M
- C-2R2-M
- C2Q750
- C2Q500
- C2Q375
- C2Q300
- C2Q3.5
- C2Q3
- C2Q250
- C2Q2.5
- C2Q2
- C2Q1.5
- C2Q1.25
- C2Q1
- C2Q_17
- C2Q_12
- C2P-U
- C2P-P
- C2P-L
- C2P-J
- C2P-1
- C2P04AC
- C2P0208N-A
- C2P0204N-A
- C2P0108N-A
- C2OHZ
- C2M200S
- C2M1000170D
- C2M0280120D
- C2M0080120D
- C2M0040120D
- C2M0025120D
- C2LG6-F
- C2LG6
- C2KO-P107
- C2K0-P107
- C2K0P107
- C2-E2R
- C2D20120D
- C2D10120D
- C2D10120A
- C2D05120E
- C2D05120A
- C2-C6
- C2BPS1923CG1
- C2BPS1923BK1
- C2A-T
- C2A3P
- C2A2P-489
- C2A2P
- C2955
- C291T
- C291S
- C291PB
- C291PA
- C291P
- C291N
- C291M
- C291E
- C2910A
- C290T
- C290S
- C290PB
- C290PA
- C290P
- C290N
- C290M
- C290F
C2M0160120D数据表相关新闻
C3200-0332
优势渠道
2024-1-2C315C105K3R5TA
C315C105K3R5TA
2023-10-10C2M0040120D 碳化硅功率MOSFET SIC 深圳市正纳电子有限公司
C2M0040120D
2020-12-23C1CB00002620
C1CB00002620,当天发货0755-82732291全新原装现货或门市自取.
2020-11-11C3216C0G1H104J080AA产品资料 集成电路接口芯片
C3216C0G1H104J080AA产品资料 品牌：TDK 原装正品现货
2020-6-13C2012X5R1A225M-60毫安稳压电荷泵电压逆变器
TPS6040x是一个系列器件产生一个不受管制的负输出电压的输入电压范围从1.6 V至5.5 V的设备通常提供了5 V或3.3 V由于preregulated供应铁路宽输入电压范围，两个或三个镍镉，镍氢电池或碱性电池，以及一个锂离子电池动力的。只有三个外部1μF电容需要构建一个完整的电荷泵DC / DC逆变器。组装在5引脚SOT23封装，完整的转换器，可以建在一个50平方毫米的电路板面积。额外的电路板面积元件数量的减少是通过取代肖特基二极管，通常需要启动成积体电路的负荷。TPS6040x能够以一个典型的转换效率，更大的一个最大输出电流60毫安在很宽的输出电流范围内超过90％。 3与20千赫，5
2012-12-28
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
