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S25F价格
参考价格:¥3.1769
型号:S25FL032A0LMFI003 品牌:Spansion 备注:这里有S25F多少钱,2025年最近7天走势,今日出价,今日竞价,S25F批发/采购报价,S25F行情走势销售排行榜,S25F报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
S25F | Schottky Rectifier ■ Features ● Io 2.0A ● VRRM 20V~200V ● Low VF, Low power loss ● High surge forward current capability ■ Applications ● Rectifier | YANGJIE 扬杰电子 | ||
S25F | Surface Mount Schottky Rectifiers Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C | RFE RFE international | ||
S25F | 封装/外壳:轴向 包装:散装 描述:DIODE GEN PURP 2.5KV 500MA AXIAL 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | |
S25F | RECTIFIER, up to 2.5kV, 500mA, 300ns 文件:121.02 Kbytes Page:3 Pages | SEMTECH 先之科 | ||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed | spansion 飞索 | |||
32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus General Description The S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub sectors. The S25FL032P device is fully backward compatible w | spansion 飞索 | |||
32-Mbit 3.0 V Flash Memory General Description The S25FL032P is a 3.0 V (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 64 uniform 64-KB sectors with the two (top or bottom) 64-KB sectors further split up into thirty-two 4-KB sub sectors. The S25FL032P device is fully backward compatible w | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus General Description The S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub sectors. The S25FL032P device is fully backward compatible w | spansion 飞索 | |||
64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro | spansion 飞索 | |||
64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro | spansion 飞索 | |||
64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro | spansion 飞索 | |||
64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro | spansion 飞索 | |||
64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro | spansion 飞索 | |||
64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro | spansion 飞索 | |||
64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro | spansion 飞索 | |||
64-Mbit CMOS 3.0 Volt Flash Memory with 80-MHz SPI (Serial Peripheral Interface) Multi I/O Bus General Description The S25FL064K (16-Mbit) Serial Flash memory provides an ideal storage solution for systems with limited space, pins and power. The device offers flexibility and performance well beyond ordinary Serial Flash devices. It is ideal for code shadowing to RAM, executing code direc | spansion 飞索 | |||
IC FLASH 64MBIT SPI/QUAD 8USON FLASH - NOR 메모리 IC 64Mbit SPI - 쿼드 I/O, QPI 108 MHz 8-USON(4x4) | Infineon 英飞凌 | |||
64-Mbit (8-Mbyte) 3.0 V FL-L SPI Flash Memory Features Serial Peripheral Interface (SPI) with Multi-I/O – Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Quad peripheral interface (QPI) option – Extended addressing: 24- or 32-bit address options – Serial command subset and footprint compatible with S25FL-A, S | Infineon 英飞凌 | |||
64-Mbit (8-Mbyte) 3.0 V FL-L SPI Flash Memory Features Serial Peripheral Interface (SPI) with Multi-I/O – Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Quad peripheral interface (QPI) option – Extended addressing: 24- or 32-bit address options – Serial command subset and footprint compatible with S25FL-A, S | Infineon 英飞凌 | |||
64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib | spansion 飞索 | |||
64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib | spansion 飞索 | |||
64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib | spansion 飞索 | |||
128 Mbit (16 Mbyte) MirrorBit짰 Flash Non-Volatile Memory CMOS 3.0 Volt Core 128 Mbit (16 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O General Description The Spansion S25FL127S device is a flash non-volatile memory product using: ■ MirrorBit technology - that stores two data bits in each memory a | spansion 飞索 | |||
128-Mbit (16 Mbyte) 3.0 V SPI Flash Memory Overview General Description The Cypress S25FL127S device is a flash non-volatile memory product using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process litho | CypressCypress Semiconductor 赛普拉斯赛普拉斯半导体公司 | |||
128 Mbit (16 Mbyte) 3.0V SPI Flash Memory Features CMOS 3.0 Volt Core Density – 128 Mbits (16 Mbytes) Serial Peripheral Interface (SPI) with Multi-I/O – SPI Clock polarity and phase modes 0 and 3 – Extended Addressing: 24- or 32-bit address options – Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25 | Infineon 英飞凌 | |||
128 Mbit (16 Mbyte) 3.0V SPI Flash Memory Features CMOS 3.0 Volt Core Density – 128 Mbits (16 Mbytes) Serial Peripheral Interface (SPI) with Multi-I/O – SPI Clock polarity and phase modes 0 and 3 – Extended Addressing: 24- or 32-bit address options – Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25 | Infineon 英飞凌 | |||
128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus Architectural Advantages Single power supply operation – Full voltage range: 2.7 to 3.6V read and write operations Memory architecture – Uniform 4 kB sectors – 256-byte page size Program – Page Program (up to 256 bytes) in 0.7 ms (typical) – Progra | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 | |||
128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device | spansion 飞索 |
S25F产品属性
- 类型
描述
- 型号
S25F
- 制造商
Semtech Corporation
- 功能描述
D MET 250MA FAST 2.5KV
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SPANCION |
24+ |
24000 |
|||||
CYPRESS/赛普拉斯 |
21+ |
NA |
12500 |
只做全新原装公司现货特价 |
|||
SPANSION |
23+ |
DFN8 |
50000 |
全新原装正品现货,支持订货 |
|||
Cypress |
25+ |
SOP8 |
6190 |
代理渠道/只做原装/可含税 |
|||
SPANSION |
24+ |
SOP8 |
35400 |
全新原装现货/假一罚百! |
|||
Cypress |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
23+ |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||||
SPANSION |
SOP8 |
2500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
SPANSION |
23+ |
5000 |
原装现货 本公司为一般纳税人,可开17%增值税票 |
||||
CYPRESS/赛普拉斯 |
15+ |
SOP8 |
7475 |
原装现货 价格优势 |
S25F规格书下载地址
S25F参数引脚图相关
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- S25FL064P0XBHI020
- S25FL032P0XNFI011
- S25FL032P0XNFI010
- S25FL032P0XNFI001
- S25FL032P0XNF>>
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- S25FL032P0XMFI000
- S25FL032P0XMF>>
- S25FL032P0XBHI033
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- S25FL032A0LMFI003
- S-25FF-50'
- S-25FF-25'
- S-25FF-10'
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- S-25F9F-10'
- S25DR
- S25D60
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- S-25
S25F数据表相关新闻
S1D13L01F00A100
S1D13L01F00A100
2023-6-25S1S60020F00A1
https://hch01.114ic.com/
2020-11-13S25FL127SABMFI101
SOP2-16 NOR闪存 , S25FL512S NOR闪存 , 256 Mbit WSON-8 SPI NOR闪存 , PLCC-32 NOR闪存 , Quad SPI NOR闪存 , 16 Mbit TSOP-48 NOR闪存
2020-9-23S25FL032P0XMFI011
1 Gbit SPI NOR闪存,闪存SPI NOR闪存,1 Mbit NOR闪存,32 Mbit SOP-8 1.65 V NOR闪存,64 Mbit SOP-8 SPI 3.6 V NOR闪存,PDIP-32 NOR闪存
2020-7-27S25FL032P0XMFI011 闪存 原装现货假一罚十
WSON-8 NOR闪存 , 1 Gbit AEC-Q100 NOR闪存 , SPI SMD/SMT NOR闪存 , 4 Mbit NOR NOR闪存 , SOP-16 NOR闪存 , 512 Mbit WDFN-8 SPI NOR闪存
2020-6-12S24SE15002PDFA进口原装现货DELTA
代理分销 P-DUKE.XP-POWER.VICOR.MINMAX. MEANWELL.TRACO.COSEL.MORNSUN,DELTA.TDK 一系列DC-DC/AC-DC 电源转换器, 产品广泛用于医疗设备.轨道交通.军事设备.工控设备等领域。 联系人:刘小姐:13510619928/微信同号,QQ:3171516190
2020-4-8
DdatasheetPDF页码索引
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