S25F价格

参考价格:¥3.1769

型号:S25FL032A0LMFI003 品牌:Spansion 备注:这里有S25F多少钱,2025年最近7天走势,今日出价,今日竞价,S25F批发/采购报价,S25F行情走势销售排行榜,S25F报价。
型号 功能描述 生产厂家 企业 LOGO 操作
S25F

Schottky Rectifier

■ Features ● Io 2.0A ● VRRM 20V~200V ● Low VF, Low power loss ● High surge forward current capability ■ Applications ● Rectifier

YANGJIE

扬杰电子

S25F

Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

RFE

RFE international

S25F

封装/外壳:轴向 包装:散装 描述:DIODE GEN PURP 2.5KV 500MA AXIAL 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

S25F

RECTIFIER, up to 2.5kV, 500mA, 300ns

文件:121.02 Kbytes Page:3 Pages

SEMTECH

先之科

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

spansion

飞索

32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub sectors. The S25FL032P device is fully backward compatible w

spansion

飞索

32-Mbit 3.0 V Flash Memory

General Description The S25FL032P is a 3.0 V (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 64 uniform 64-KB sectors with the two (top or bottom) 64-KB sectors further split up into thirty-two 4-KB sub sectors. The S25FL032P device is fully backward compatible w

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub sectors. The S25FL032P device is fully backward compatible w

spansion

飞索

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

spansion

飞索

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

spansion

飞索

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

spansion

飞索

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

spansion

飞索

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

spansion

飞索

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

spansion

飞索

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

spansion

飞索

64-Mbit CMOS 3.0 Volt Flash Memory with 80-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL064K (16-Mbit) Serial Flash memory provides an ideal storage solution for systems with limited space, pins and power. The device offers flexibility and performance well beyond ordinary Serial Flash devices. It is ideal for code shadowing to RAM, executing code direc

spansion

飞索

IC FLASH 64MBIT SPI/QUAD 8USON

FLASH - NOR 메모리 IC 64Mbit SPI - 쿼드 I/O, QPI 108 MHz 8-USON(4x4)

Infineon

英飞凌

64-Mbit (8-Mbyte) 3.0 V FL-L SPI Flash Memory

Features  Serial Peripheral Interface (SPI) with Multi-I/O – Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Quad peripheral interface (QPI) option – Extended addressing: 24- or 32-bit address options – Serial command subset and footprint compatible with S25FL-A, S

Infineon

英飞凌

64-Mbit (8-Mbyte) 3.0 V FL-L SPI Flash Memory

Features  Serial Peripheral Interface (SPI) with Multi-I/O – Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Quad peripheral interface (QPI) option – Extended addressing: 24- or 32-bit address options – Serial command subset and footprint compatible with S25FL-A, S

Infineon

英飞凌

64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib

spansion

飞索

64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib

spansion

飞索

64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib

spansion

飞索

128 Mbit (16 Mbyte) MirrorBit짰 Flash Non-Volatile Memory CMOS 3.0 Volt Core

128 Mbit (16 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O General Description The Spansion S25FL127S device is a flash non-volatile memory product using: ■ MirrorBit technology - that stores two data bits in each memory a

spansion

飞索

128-Mbit (16 Mbyte) 3.0 V SPI Flash Memory

Overview General Description The Cypress S25FL127S device is a flash non-volatile memory product using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process litho

CypressCypress Semiconductor

赛普拉斯赛普拉斯半导体公司

128 Mbit (16 Mbyte) 3.0V SPI Flash Memory

Features  CMOS 3.0 Volt Core  Density – 128 Mbits (16 Mbytes)  Serial Peripheral Interface (SPI) with Multi-I/O – SPI Clock polarity and phase modes 0 and 3 – Extended Addressing: 24- or 32-bit address options – Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25

Infineon

英飞凌

128 Mbit (16 Mbyte) 3.0V SPI Flash Memory

Features  CMOS 3.0 Volt Core  Density – 128 Mbits (16 Mbytes)  Serial Peripheral Interface (SPI) with Multi-I/O – SPI Clock polarity and phase modes 0 and 3 – Extended Addressing: 24- or 32-bit address options – Serial Command set and footprint compatible with S25FL-A, S25FL-K, and S25

Infineon

英飞凌

128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

Architectural Advantages  Single power supply operation – Full voltage range: 2.7 to 3.6V read and write operations  Memory architecture – Uniform 4 kB sectors – 256-byte page size  Program – Page Program (up to 256 bytes) in 0.7 ms (typical) – Progra

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

spansion

飞索

S25F产品属性

  • 类型

    描述

  • 型号

    S25F

  • 制造商

    Semtech Corporation

  • 功能描述

    D MET 250MA FAST 2.5KV

更新时间:2025-11-23 10:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
SPANCION
24+
24000
CYPRESS/赛普拉斯
21+
NA
12500
只做全新原装公司现货特价
SPANSION
23+
DFN8
50000
全新原装正品现货,支持订货
Cypress
25+
SOP8
6190
代理渠道/只做原装/可含税
SPANSION
24+
SOP8
35400
全新原装现货/假一罚百!
Cypress
25+
电联咨询
7800
公司现货,提供拆样技术支持
23+
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
SPANSION
SOP8
2500
一级代理 原装正品假一罚十价格优势长期供货
SPANSION
23+
5000
原装现货 本公司为一般纳税人,可开17%增值税票
CYPRESS/赛普拉斯
15+
SOP8
7475
原装现货 价格优势

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