Schottky Rectifier

■ Features ● Io 2.0A ● VRRM 20V~200V ● Low VF, Low power loss ● High surge forward current capability ■ Applications ● Rectifier

Surface Mount Schottky Rectifiers

Features Low profile package Ideal for automated placement Guardring for overvoltage protection Low power losses, high efficiency High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

封装/外壳：轴向 包装：散装 描述：DIODE GEN PURP 2.5KV 500MA AXIAL 分立半导体产品 二极管 - 整流器 - 单

RECTIFIER, up to 2.5kV, 500mA, 300ns

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16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

16 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL016A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of thirty-two sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed

32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub sectors. The S25FL032P device is fully backward compatible w

32-Mbit 3.0 V Flash Memory

General Description The S25FL032P is a 3.0 V (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 64 uniform 64-KB sectors with the two (top or bottom) 64-KB sectors further split up into thirty-two 4-KB sub sectors. The S25FL032P device is fully backward compatible w

32-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL032P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 uniform 64 KB sectors with the two (Top or Bottom) 64 KB sectors further split up into thirty-two 4KB sub sectors. The S25FL032P device is fully backward compatible w

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

64 Megabit CMOS 3.0 Volt Flash Memory with 50MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL064A is a 3.0 Volt (2.7 V to 3.6 V), single-power-supply Flash memory device. The device consists of 128 sectors, each with 512 Kb memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be pro

64-Mbit CMOS 3.0 Volt Flash Memory with 80-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL064K (16-Mbit) Serial Flash memory provides an ideal storage solution for systems with limited space, pins and power. The device offers flexibility and performance well beyond ordinary Serial Flash devices. It is ideal for code shadowing to RAM, executing code direc

IC FLASH 64MBIT SPI/QUAD 8USON

FLASH - NOR 메모리 IC 64Mbit SPI - 쿼드 I/O, QPI 108 MHz 8-USON(4x4)

64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib

64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib

64-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

General Description The S25FL064P is a 3.0 Volt (2.7V to 3.6V), single-power-supply flash memory device. The device consists of 128 uniform 64 kB sectors with the two (Top or Bottom) 64 kB sectors further split up into thirty-two 4 kB sub sectors. The S25FL064P device is fully backward compatib

128 Mbit (16 Mbyte) MirrorBit짰 Flash Non-Volatile Memory CMOS 3.0 Volt Core

128 Mbit (16 Mbyte) MirrorBit® Flash Non-Volatile Memory CMOS 3.0 Volt Core Serial Peripheral Interface with Multi-I/O General Description The Spansion S25FL127S device is a flash non-volatile memory product using: ■ MirrorBit technology - that stores two data bits in each memory a

128-Mbit (16 Mbyte) 3.0 V SPI Flash Memory

Overview General Description The Cypress S25FL127S device is a flash non-volatile memory product using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process litho

128-Mbit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Multi I/O Bus

Architectural Advantages  Single power supply operation – Full voltage range: 2.7 to 3.6V read and write operations  Memory architecture – Uniform 4 kB sectors – 256-byte page size  Program – Page Program (up to 256 bytes) in 0.7 ms (typical) – Progra

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

General Description The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory. The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The device

MirrorBit짰 Flash Non-Volatile Memory CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O

General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process li

128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 3.0V SPI Flash Memory

General Description The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process lit

CMOS 3.0 Volt Core with Versatile I/O Serial Peripheral Interface with Multi-I/O

General Description The Spansion S25FL128S and S25FL256S devices are flash non-volatile memory products using: ■ MirrorBit technology - that stores two data bits in each memory array transistor ■ Eclipse architecture - that dramatically improves program and erase performance ■ 65 nm process li

128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)

Features  CMOS 3.0 Volt Core with Versatile I/O  Serial Peripheral Interface (SPI) with Multi-I/O – SPI Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Extended Addressing: 24- or 32-bit address options – Serial Command set and footprint compatible with S25FL-A, S2