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S25FL128P0XNFI011中文资料

厂家型号

S25FL128P0XNFI011

文件大小

2035.26Kbytes

页面数量

48

功能描述

128 Megabit CMOS 3.0 Volt Flash Memory with 104-MHz SPI (Serial Peripheral Interface) Bus

闪存 128M CMOS 3V104MHZ Serial NOR 闪存

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

SPANSION

S25FL128P0XNFI011数据手册规格书PDF详情

General Description

The S25FL128P is a 3.0 Volt (2.7V to 3.6V), single-power-supply Flash memory device. The device consists of 64 sectors of 256 KB memory, or 256 sectors of 64 KB memory.

The device accepts data written to SI (Serial Input) and outputs data on SO (Serial Output). The devices are designed to be programmed in-system with the standard system 3.0 volt VCC supply.

The memory can be programmed 1 to 256 bytes at a time, using the Page Program command. The device supports Sector Erase and Bulk Erase commands.

Distinctive Characteristics

Architectural Advantages

Single power supply operation

– Full voltage range: 2.7V to 3.6V read and program operations

Memory Architecture

– 128Mb uniform 256 KB sector product

– 128Mb uniform 64 KB sector product

Program

– Page Program (up to 256 bytes) in 1.5 ms (typical)

– Faster program time in Accelerated Programming mode(8.5 V–9.5 V on #WP/ACC) in 1.2 ms (typical)

Erase

– 2 s typical 256 KB sector erase time

– 0.5 s typical 64 KB sector erase time

– 128 s typical bulk erase time

– Sector erase (SE) command (D8h) for 256 KB sectors; (20h or D8h) for 64KB sectors

– Bulk erase command (C7h) for 256 KB sectors; (60h or C7h) for 64KB sectors

Cycling Endurance

– 100,000 cycles per sector typical

Data Retention

– 20 years typical

Device ID

– RDID (9Fh), READ_ID (90h) and RES (ABh) commands to read manufacturer and device ID information

– RES command one-byte electronic signature for backward compatibility

Process Technology

– Manufactured on 0.09 µm MirrorBit® process technology

Package Option

– Industry Standard Pinouts

– 16-pin SO package (300 mils)

– 8-Contact WSON Package (6 x 8 mm)

Performance Characteristics

Speed

– 104 MHz clock rate (maximum)

Power Saving Standby Mode

– Deep Power Down Mode 3 µA (typical)

– Standby Mode 200 µA (max)

Memory Protection Features

Memory Protection

– WP#/ACC pin works in conjunction with Status Register Bits to protect specified memory areas

– 256 KB uniform sector product:

Status Register Block Protection bits (BP2, BP1, BP0) in status

register configure parts of memory as read-only.

– 64KB uniform sector product:

Status Register Block Protection bits (BP3, BP2, BP1, BP0) in

status register configure parts of memory as read-only

Software Features

– SPI Bus Compatible Serial Interface

Hardware Features

x8 Parallel Programming Mode (for 16-pin SO package only)

S25FL128P0XNFI011产品属性

  • 类型

    描述

  • 型号

    S25FL128P0XNFI011

  • 功能描述

    闪存 128M CMOS 3V104MHZ Serial NOR 闪存

  • RoHS

  • 制造商

    ON Semiconductor

  • 数据总线宽度

    1 bit

  • 存储类型

    Flash

  • 存储容量

    2 MB

  • 结构

    256 K x 8

  • 接口类型

    SPI

  • 电源电压-最大

    3.6 V

  • 电源电压-最小

    2.3 V

  • 最大工作电流

    15 mA

  • 工作温度

    - 40 C to + 85 C

  • 安装风格

    SMD/SMT

  • 封装

    Reel

更新时间:2025-10-19 13:00:00
供应商 型号 品牌 批号 封装 库存 备注 价格
SPANSION
23+
QFN8
50000
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SPANSION
23+
QFN
50000
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SPANSION
1133
10
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SPANSION
24+
QFN
60000
SPANSION
24+
NA/
920
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SPANSION
24+
QFN8
21574
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SPANSION
2447
QFN8
100500
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SPANSION
21+
8WSON
6000
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SPANSION
23+
8WSON
11200
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SPANSION
22+
8WSON
12245
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S25FL128P0XNFI011 价格

参考价格:¥12.2245

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