位置：RM5N500IP > RM5N500IP详情
RM5N500IP中文资料
RM5N500IP数据手册规格书PDF详情
General Features
VDS =500V,ID =5A
RDS(ON) <1.5 @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
更新时间：2025-10-17 11:06:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
N/A |
60000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
NK/南科功率 |
2025+ |
SOT-223 |
986966 |
国产 |
|||
WSTR |
24+ |
62 |
|||||
亚成微 |
23+ |
SOT23-6 |
7500 |
亚成微全系列在售 |
|||
BUSSMANN/巴斯曼 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
RM5N500IP 资料下载更多...
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