位置：RM5N150D3 > RM5N150D3详情
RM5N150D3中文资料
RM5N150D3数据手册规格书PDF详情
General Features
VDS = 150V,ID =4.6A
RDS(ON) < 75mΩ @ VGS=10V (Typ:63mΩ)
RDS(ON) < 88mΩ @ VGS=4.5V (Typ:70m Ω )
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
更新时间：2025-10-15 14:00:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NK/南科功率 |
2025+ |
DFN3x3 |
986966 |
国产 |
|||
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
WSTR |
24+ |
62 |
|||||
亚成微 |
23+ |
SOT23-6 |
7500 |
亚成微全系列在售 |
|||
BUSSMANN/巴斯曼 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
RM5N150D3 资料下载更多...
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