位置:RM5N150S8 > RM5N150S8详情
RM5N150S8中文资料
RM5N150S8数据手册规格书PDF详情
General Features
VDS = 150V,ID =4.6A
RDS(ON) < 75mΩ @ VGS=10V (Typ:63mΩ)
RDS(ON) < 88mΩ @ VGS=4.5V (Typ:70m Ω )
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
更新时间:2025-5-2 11:06:00
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
24+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
WSTR |
24+ |
62 |
|||||
亚成微 |
23+ |
SOT23-6 |
7500 |
亚成微全系列在售 |
|||
BUSSMANN/巴斯曼 |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
RM5N150S8 资料下载更多...
RM5N150S8 芯片相关型号
- DSA/DSO90254A
- LTM8031
- LTM8032
- MEPA-14P5-G
- MEPA-14P5-G/Q
- MEPA-14P5-H
- MEPA-14P5-H/Q
- MEPA-14P5-J
- MEPA-14P5-J/Q
- MEPA-14P5-P
- MEPA-14P5-P/Q
- MEPA-14P5-R
- MEPA-14P5-R/Q
- MEPA-14P5-S
- MEPA-14P5-S/Q
- MEPA-14P5-V
- RM5N150D3
- RM5N30S6
- RM5N40S2
- RM5N500IP
- RM5N800HD
- RM5N800T2
- RM5N800TI
- SN74LS244DWR
- TRG22F2FEYLN
- TRG22F2FEYNN
- UHVB33512GKL250M
- UHVB33512GKL500M
- UHVB33512GKL90M0
- W4181-8SG-P-3ES
Datasheet数据表PDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96