Description

The RM10N100S8 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

VDS = 100V,ID =10A

RDS(ON) < 14mΩ @ VGS=10V

RDS(ON) < 21mΩ @ VGS=4.5V

Special process technology for high ESD capability

High density cell design for ultra low Rdson

Fully characterized avalanche voltage and current

Application

DC/DC Primary Side Switch

Telecom/Server

Synchronous Rectification

Halogen-free