| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
RU40120M | N-Channel Advanced Power MOSFET 文件：309.16 Kbytes Page：8 Pages | RUICHIPS 锐骏半导体 |   | |
RU40120M | Trench MOSFET | RUICHIPS 锐骏半导体 | | |
120 W, RF Power GaN HEMT Description Cree’s CGH40120F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain an | WOLFSPEED | | ||
120 W, RF Power GaN HEMT Description Wolfspeed’s CGH40120P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40120P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga | WOLFSPEED | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | | ||
120 W, RF Power GaN HEMT 文件：1.21044 Mbytes Page：13 Pages | Cree 科锐 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Ruichip |
24+ |
QFN5*6 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
锐骏 |
21+ |
PDFN5060 |
76000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
RUICHIPS |
24+ |
DFN5060 |
60000 |
原装现货 |
|||
RUICHIPS |
20+ |
DFN56 |
32550 |
原装优势主营型号-可开原型号增税票 |
|||
RUICHIPS |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
源盛发YUANSHENGFA |
24+ |
DFN5X6 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
RUICHIPS/锐骏 |
24+ |
TO-220 |
350000 |
专营RUICHIPS原装保障 |
|||
RUICHIPS |
新年份 |
DFN56 |
67430 |
一级代理原装正品现货,支持实单! |
|||
Ruichips(锐骏半导体) |
25+ |
PDFN-8(5.8x4.9) |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
RUICHIPS |
23+ |
DFN56 |
6000 |
原装正品，支持实单 |
RU40120M规格书下载地址
RU40120M参数引脚图相关
- sd200
- sc2608
- sc2262
- sanken
- sa950
- sa28
- s9018
- s9015
- s9014
- s9013
- s8550
- s8050三极管
- s8050
- s7-200
- s7200
- s5230
- s510b
- s1100
- s101
- s007
- RU4BZ
- RU4BGF
- RU4AZ
- RU4AMZ
- RU4AM
- RU4AJG
- RU4AGF
- RU4953H
- RU42S-M
- RU42S-C
- RU42S
- RU40S4H
- RU40P4H
- RU40P3C
- RU4099R
- RU4099Q
- RU4095L
- RU4090L
- RU4089R
- RU4068L
- RU4030M2
- RU40280R
- RU40231R
- RU40231Q2
- RU40220R
- RU40191S
- RU40190S
- RU40190Q2
- RU40180M
- RU40150S
- RU40150R
- RU40130R
- RU40121R
- RU40121M
- RU40120S
- RU40120R
- RU4
- RU3Z
- RU3YZ
- RU3YXZ
- RU3YX_V01
- RU3YX
- RU3Y
- RU3MG
- RU3M
- RU3JGF
- RU3JG
- RU3CZ
- RU3C
- RU3BZ
- RU3B
- RU3AMS
- RU3AM_05
- RU3AM
- RU3A
- RU3710S
- RU3710R
- RU3582S
- RU3582R
- RU3568R
- RU3568L
- RU3560L
- RU3520H
- RU3415C
- RU3401C
- RU3225
RU40120M数据表相关新闻
RU40191S
RU40191S 40V 190AN沟道功率MOSFET RU40191S，漏源电压VDSS为40V，栅源电压VGSS为±20V，TC=25℃ 时漏极连续电流ID为190A（VGS=10V），漏源导通电阻RDS(ON)典型值为1.8mΩ（@VGS=10V，IDS=75A）。
2022-11-23RU40120M
RU40120M N沟道 40V 120A PDFN5060 场效应管 RU40120M N沟道 漏源电压(Vdss)：40V 连续漏极电流(Id)：120A 功率(Pd)：96W 导通电阻(RDS(on)@Vgs,Id)：4.5mΩ@10V,60A 阈值电压(Vgs(th)@Id)：4V@250uA N 沟道，40V，120A，2.7mΩ@10V RU40120M 封装:PDFN5060 N沟道高级功率MOS
2022-11-23RU3560L
RU3560L，场效应管(MOSFET)
2022-6-12RU3415BC
RU3415BC，SOT23-3，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-17RU3415B
RU3415B，SOT23，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-17RU40120R
RU40120R ，全新原装当天发货或门市自取0755-82732291.
2019-12-1
DdatasheetPDF页码索引
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