丝印代码：8372；RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in 800 MHz and UHF frequency ranges. • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 750 mW Minimum Gain = 8.0 dB Efficiency 60 (Typ) • State–of–the–Art Techno

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the 800 MHz and UHF frequency ranges. Features • Specified @ 12.5V, 870 MHz characteristics • Output Power = 750 mW • Minimum Gain = 8.0dB • Efficiency 60 Typical • Cost Effective SO-8 package

4-Port FC/GE Retimer and FC-AL Port Bypass Controller

GENERAL • Supports 4 Fibre Channel Physical Interfaces at 1.0625 or 2.125 Gbit/s per Fibre Channel – Physical Interface (FC-PI) or 4 Gigabit Ethernet Retimers at 1.25 Gbit/s per IEEE 802.3z. • Each port supports FC 1G or 2G rate detection/auto-selection. • Supports Arbitrated Loop and Ret

16-BIT, 1-MSPS, PSEUDO-BIPOLAR, FULLY DIFFERENTIAL INPUT, MICROPOWER SAMPLING ANALOG-TO-DIGITAL CONVERTER WITH PARALLEL INTERFACE, REFERENCE

文件：1.0495 Mbytes Page：30 Pages

16-BIT, 600-kHz, PSEUDO-DIFFERENTIAL INPUT, MICROPOWER SAMPLING ANALOG-TO-DIGITAL CONVERTER WITH SERIAL INTERFACE AND REFERENCE

文件：782.92 Kbytes Page：29 Pages